JPS6142166A - 半導体注入集積論理回路装置の製造方法 - Google Patents

半導体注入集積論理回路装置の製造方法

Info

Publication number
JPS6142166A
JPS6142166A JP16255184A JP16255184A JPS6142166A JP S6142166 A JPS6142166 A JP S6142166A JP 16255184 A JP16255184 A JP 16255184A JP 16255184 A JP16255184 A JP 16255184A JP S6142166 A JPS6142166 A JP S6142166A
Authority
JP
Japan
Prior art keywords
region
layer
base
base region
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16255184A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0439789B2 (enrdf_load_stackoverflow
Inventor
Toshiyuki Ookoda
敏幸 大古田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP16255184A priority Critical patent/JPS6142166A/ja
Publication of JPS6142166A publication Critical patent/JPS6142166A/ja
Publication of JPH0439789B2 publication Critical patent/JPH0439789B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0112Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0116Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP16255184A 1984-08-01 1984-08-01 半導体注入集積論理回路装置の製造方法 Granted JPS6142166A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16255184A JPS6142166A (ja) 1984-08-01 1984-08-01 半導体注入集積論理回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16255184A JPS6142166A (ja) 1984-08-01 1984-08-01 半導体注入集積論理回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6142166A true JPS6142166A (ja) 1986-02-28
JPH0439789B2 JPH0439789B2 (enrdf_load_stackoverflow) 1992-06-30

Family

ID=15756738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16255184A Granted JPS6142166A (ja) 1984-08-01 1984-08-01 半導体注入集積論理回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6142166A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0439789B2 (enrdf_load_stackoverflow) 1992-06-30

Similar Documents

Publication Publication Date Title
GB1593937A (en) I2l integrated circuitry
JPH0582986B2 (enrdf_load_stackoverflow)
JPH01268172A (ja) 半導体装置
JPS6142166A (ja) 半導体注入集積論理回路装置の製造方法
JPH0439787B2 (enrdf_load_stackoverflow)
JPS6142165A (ja) 半導体注入集積論理回路装置
JP2729870B2 (ja) 可変容量ダイオードとその製造方法
JP3135615B2 (ja) 半導体装置及びその製造方法
JP2558472B2 (ja) 半導体集積回路
JPS62216356A (ja) 半導体集積回路の製造方法
JPS60123062A (ja) 半導体集積回路の製造方法
JPH01161753A (ja) 半導体集積回路の製造方法
JPS6142164A (ja) 半導体注入集積論理回路装置とその製造方法
JPS63136660A (ja) 半導体装置とその製造法
JPS61207066A (ja) バイポ−ラトランジスタ
JPH0577298B2 (enrdf_load_stackoverflow)
JPS6341062A (ja) 半導体集積回路
JPH04306839A (ja) 半導体装置
JPS584454B2 (ja) ハンドウタイソウチノセイゾウホウホウ
JPH0577300B2 (enrdf_load_stackoverflow)
JPS58100457A (ja) 半導体装置
JPS61207067A (ja) 半導体集積回路装置の製造方法
JPS6267855A (ja) 半導体注入集積論理回路装置
JPH0451067B2 (enrdf_load_stackoverflow)
JPS61207064A (ja) バイポ−ラトランジスタ