JPS6141128B2 - - Google Patents

Info

Publication number
JPS6141128B2
JPS6141128B2 JP56058660A JP5866081A JPS6141128B2 JP S6141128 B2 JPS6141128 B2 JP S6141128B2 JP 56058660 A JP56058660 A JP 56058660A JP 5866081 A JP5866081 A JP 5866081A JP S6141128 B2 JPS6141128 B2 JP S6141128B2
Authority
JP
Japan
Prior art keywords
rods
quartz glass
carrier enclosure
slits
bars
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56058660A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5737826A (en
Inventor
Jei Bein Shii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HEREUSU KUARUTSUSHUMERUTSUE GmbH
Original Assignee
HEREUSU KUARUTSUSHUMERUTSUE GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HEREUSU KUARUTSUSHUMERUTSUE GmbH filed Critical HEREUSU KUARUTSUSHUMERUTSUE GmbH
Publication of JPS5737826A publication Critical patent/JPS5737826A/ja
Publication of JPS6141128B2 publication Critical patent/JPS6141128B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H01L21/67316—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C30B31/103—Mechanisms for moving either the charge or heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Packaging Frangible Articles (AREA)
JP5866081A 1980-08-16 1981-04-20 Carrier enclosure for semiconductor disc Granted JPS5737826A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19808021868 DE8021868U1 (de) 1980-08-16 1980-08-16 Traegerhorde fuer halbleiterscheiben

Publications (2)

Publication Number Publication Date
JPS5737826A JPS5737826A (en) 1982-03-02
JPS6141128B2 true JPS6141128B2 (enrdf_load_stackoverflow) 1986-09-12

Family

ID=6718055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5866081A Granted JPS5737826A (en) 1980-08-16 1981-04-20 Carrier enclosure for semiconductor disc

Country Status (4)

Country Link
JP (1) JPS5737826A (enrdf_load_stackoverflow)
DE (1) DE8021868U1 (enrdf_load_stackoverflow)
FR (1) FR2488731A1 (enrdf_load_stackoverflow)
GB (1) GB2082388B (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844836U (ja) * 1981-09-21 1983-03-25 日本電気ホームエレクトロニクス株式会社 半導体製造治具
EP0100539A3 (en) * 1982-07-30 1985-05-22 Tecnisco Ltd. Assembled device for supporting semiconductor wafers or the like
DE3419866C2 (de) * 1984-05-28 1986-06-26 Heraeus Quarzschmelze Gmbh, 6450 Hanau Trägerhorde aus Quarzglas für scheibenförmige Substrate
DE3440111C1 (de) * 1984-11-02 1986-05-15 Heraeus Quarzschmelze Gmbh, 6450 Hanau Traegerhorde
DE3441887C1 (de) * 1984-11-16 1985-10-17 Heraeus Quarzschmelze Gmbh, 6450 Hanau Ofen fuer die Waermebehandlung von Halbleiter-Substraten
EP0267462A3 (en) * 1986-11-12 1990-01-31 Heraeus Amersil, Inc. Mass transferable semiconductor substrate processing and handling full shell carrier (boat)
DE3829159A1 (de) * 1988-08-27 1990-03-08 Westdeutsche Quarzschmelze Gmb Vorrichtung zur aufnahme von halbleiterscheibchen
EP0725978B1 (en) * 1994-08-31 2003-01-08 Heraeus Quarzglas GmbH & Co. KG Method of producing a quartz glass jig for the heat treatment of silicon wafers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068775A (enrdf_load_stackoverflow) * 1973-10-19 1975-06-09
JPS53133366A (en) * 1977-04-27 1978-11-21 Nec Corp Impurity diffusion method

Also Published As

Publication number Publication date
GB2082388B (en) 1984-05-23
DE8021868U1 (de) 1981-01-29
JPS5737826A (en) 1982-03-02
GB2082388A (en) 1982-03-03
FR2488731B3 (enrdf_load_stackoverflow) 1983-06-10
FR2488731A1 (fr) 1982-02-19

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