JPS6141128B2 - - Google Patents

Info

Publication number
JPS6141128B2
JPS6141128B2 JP56058660A JP5866081A JPS6141128B2 JP S6141128 B2 JPS6141128 B2 JP S6141128B2 JP 56058660 A JP56058660 A JP 56058660A JP 5866081 A JP5866081 A JP 5866081A JP S6141128 B2 JPS6141128 B2 JP S6141128B2
Authority
JP
Japan
Prior art keywords
rods
quartz glass
carrier enclosure
slits
bars
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56058660A
Other languages
Japanese (ja)
Other versions
JPS5737826A (en
Inventor
Jei Bein Shii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HEREUSU KUARUTSUSHUMERUTSUE GmbH
Original Assignee
HEREUSU KUARUTSUSHUMERUTSUE GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HEREUSU KUARUTSUSHUMERUTSUE GmbH filed Critical HEREUSU KUARUTSUSHUMERUTSUE GmbH
Publication of JPS5737826A publication Critical patent/JPS5737826A/en
Publication of JPS6141128B2 publication Critical patent/JPS6141128B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H01L21/67316—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C30B31/103—Mechanisms for moving either the charge or heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Packaging Frangible Articles (AREA)

Description

【発明の詳細な説明】 本発明は、それぞれ２本の上方及び２本の下方
の、スリツトを設けられた、平行に相互に延びて
いる棒から成立つており、この場合、両方の上方
の棒の相互の間隔が両方の下方の棒に相互の間隔
よりもよりきく、また、４本の棒がそれらの端部
の領域において不動に保持されており、多数の半
導体円板が、それらの縁領域がスリツトの中に突
出するようになつている半導体中板のための石英
ガラス製の担体囲いに関するものである。DETAILED DESCRIPTION OF THE INVENTION The invention consists of two upper and two lower bars extending parallel to each other, provided with slits, in which case both upper bars The mutual spacing of the two lower bars is greater than the mutual spacing of the two lower bars, and the four bars are held stationary in the region of their ends, and a number of semiconducting disks are attached to their edges. The present invention relates to a carrier enclosure made of quartz glass for semiconductor substrates whose regions protrude into slots.

前述の特徴を有している担体囲いは、英国特許
第1436503号から公知である。これらの担体囲い
は、実用的に有効であることが実証されている。 A carrier enclosure having the above-mentioned characteristics is known from GB 1436503. These carrier enclosures have proven to be useful in practice.

本発明の課題は、高価な石英ガラスの使用を節
減の下に、半導体円板を装荷された囲いの確実な
取いを保証し、また、半導体円板の合成樹脂囲い
から石英ガラス囲いの上への速やかな移し換えを
確実にする、簡単に製造されることのできる担体
囲いを得るということにある。その上に、この担
体囲いの応用範囲を拡張することにも、あるもの
である。 The object of the invention is to ensure reliable removal of enclosures loaded with semiconductor disks while reducing the use of expensive quartz glass, and also to ensure that the synthetic resin enclosure of the semiconductor disks can be removed from the quartz glass enclosure. The object is to obtain a carrier enclosure that can be easily manufactured and that ensures rapid transfer to the substrate. Moreover, there is also a need to extend the range of applications of this carrier enclosure.

この頭初に述べられた種類の担体囲いに対する
課題は、本発明によると、支持体がそれぞれ１本
の石英ガラス管から成立つており、このラス管が
棒に対して横方向に上方及び下方に棒の間に配置
されると共にこれらに融合されることによつて解
決される。 The problem with carrier enclosures of the type mentioned at the outset is that, according to the invention, the supports each consist of a quartz glass tube, which lath tubes extend upward and downward transversely to the bar. The solution is to be placed between the rods and fused to them.

本発明による担体囲いの他の有利な特長が、
「特許請求の範囲」第２項以下に与えられてい
る。 Other advantageous features of the carrier enclosure according to the invention are:
The claims are given in Section 2 of the Claims.

以下、本発明を、その実施例を示す添附図面に
基づいて詳細に説明する。 DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to the accompanying drawings showing embodiments thereof.

第１図に示す担体囲いは、６個の構成部材、す
なわち、両方の上方の棒１と、両方の下方の棒２
と、棒１と棒２との間に、それらの端部領域の中
において配置された２個の石英ガラス管３とから
成立つており、これらのガラス管３は、それぞ
れ、上方及び下方の棒１及２に、場所４において
融合されている。棒１及び２は、石英ガラスから
成立つており、また、同じ幅のスリツト７から設
けられており、それらの中に、担体囲いにより支
持される半導体円板の縁領域が突出するようにな
つている。第１図から分かるように、石英ガラス
管３の端部は、下方に斜めに切断されている。な
お、この斜めの切断は、担体囲いが、大抵は円形
炉の形式である熱処理炉の中へ挿入される時に、
その挿入作業を容易とさせることを考慮している
ものである。棒１、２に対して横方向に配置さて
いる石英ガラス管３は装荷された、又は、荷を解
放された担体囲いが保持され且つ輸送されること
のできるフオーク状の取扱い具の歯６を受取るの
に役立つものである。その上、上方の棒１の端部
には、貫通された穴５が設けられており、それら
の穴５は、合成樹脂製担体囲いから、本発明によ
る担体囲いの上への半導体円板の移し換え及びそ
の逆の移し換えの際における位置めの助手段とし
て役立つものである。すなわち、合成樹脂製担体
囲いには、本発明による担体囲いの石英ガラス管
３に設けられれた穴５に対応する位置に突起が設
けられており、両担体囲いの間における半導体円
板の移し換えの際に、前者の突起が後者の穴５の
中に突出するようにすることにより、両方の担体
囲いの間における保持する確実とさせるようにす
ることを、意図しているものである。 The carrier enclosure shown in FIG. 1 consists of six components, namely both upper bars 1 and both lower bars 2.
and two quartz glass tubes 3 arranged between the rods 1 and 2 in their end regions, these glass tubes 3 respectively being connected to the upper and lower rods. 1 and 2 are fused at location 4. The rods 1 and 2 are made of quartz glass and are provided with slots 7 of the same width, into which the edge area of the semiconductor disk supported by the carrier enclosure protrudes. There is. As can be seen from FIG. 1, the end of the quartz glass tube 3 is cut obliquely downward. It should be noted that this diagonal cut is made when the carrier enclosure is inserted into a heat treatment furnace, most often in the form of a circular furnace.
This is intended to facilitate the insertion work. A quartz glass tube 3 arranged transversely to the rods 1, 2 has fork-like handling teeth 6 in which loaded or unloaded carrier enclosures can be held and transported. It is useful for receiving. Furthermore, the ends of the upper rods 1 are provided with through holes 5, which allow the insertion of semiconductor disks from the synthetic resin carrier enclosure onto the carrier enclosure according to the invention. It serves as a positioning aid during transfer and vice versa. That is, the synthetic resin carrier enclosure is provided with projections at positions corresponding to the holes 5 provided in the quartz glass tube 3 of the carrier enclosure according to the present invention, and the transfer of the semiconductor disk between the two carrier enclosures is facilitated. It is intended that the projections of the former project into the holes 5 of the latter, thereby ensuring a secure hold between the two carrier enclosures.

第２図に示された本発明による担体囲いの実施
例は、第１図に示されたものとは、上方及び下方
の棒１及び２が、それぞれの棒１，２の端部から
あらかじめ与えられた間隔に、スリツトの無い領
域８を有しており且つこれらの領域のそれぞれ
が、棒１及び２に対して横方向に且つこれらの間
に配置された石英ガラス製の追加の保持管９によ
つて融合されている点において相違している。こ
れによつて、その長さが、単位の担体囲いの２倍
又は４倍（４倍の場合には、より多数の追加の保
持管があらかじめ与えられた間隔に相互に配置さ
れている）である担体囲いが作られることができ
る。 The embodiment of the carrier enclosure according to the invention shown in FIG. 2 differs from that shown in FIG. 8, and each of these regions is provided with an additional holding tube 9 made of quartz glass arranged transversely to and between the rods 1 and 2. They differ in that they are fused by. This allows its length to be twice or four times as long as the unit carrier enclosure (in the case of four times a greater number of additional holding tubes are arranged with respect to each other at predetermined intervals). A carrier enclosure can be created.

第１及び第２図において使用されている同じ幅
のスリツト７を有している棒１及び２の代わり
に、第３図に示す実施例に示されるような棒１０
も、また、使用されることもできる。この棒１０
は、棒１及び２と違して、同じ幅のスリツト７及
びその幅がスリツト７の幅よりもより大きいスリ
ツト１１を有している。スリツト１１は、周期的
に繰返される間隔１２で棒１０の中に設けられて
いる。これらのスリツト１１は、板状、又は、他
のように形成されたドープ剤源の受取りに役立
ち、一方、スリツト７は、この場合にも、半導体
円板の受取りのために役立つものである。このよ
うに形成された棒１０を有している担体囲いは、
固体元素源の助けによるドープ方法の実施のため
に使用されるが、第１及び第２図に示す棒１及び
２を有する担体囲いは、酸化過程及び温度過程の
ような半導体円板に対する他の処理方法並びにガ
スからのドープに対して使用される。 Instead of the rods 1 and 2 with slits 7 of the same width as used in FIGS. 1 and 2, a rod 10 as shown in the embodiment shown in FIG.
can also be used. This stick 10
, unlike the rods 1 and 2, has a slit 7 of the same width and a slit 11 whose width is larger than the width of the slit 7. Slits 11 are provided in the rod 10 at periodically repeating intervals 12. These slits 11 serve for receiving a plate-shaped or otherwise shaped dopant source, while the slits 7 also serve in this case for receiving a semiconductor disk. A carrier enclosure with a rod 10 formed in this way is
Although used for carrying out the doping process with the aid of a solid-state element source, the carrier enclosure with the rods 1 and 2 shown in FIGS. Used for processing methods as well as doping from gases.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の１実施列の斜視図、第２図は
他の実施例の斜視図、第３図は、スリツトを設け
らた棒の１実施例の正面図である。 １，２……石英ガラス棒、３……石英ガラス
管、７，１１……スリツト、９……追加の支持
管、１０……石英ガラス棒。 FIG. 1 is a perspective view of one embodiment of the invention, FIG. 2 is a perspective view of another embodiment, and FIG. 3 is a front view of one embodiment of a rod provided with a slit. 1, 2... quartz glass rod, 3... quartz glass tube, 7, 11... slit, 9... additional support tube, 10... quartz glass rod.

Claims (1)

【特許請求の範囲】 １ それぞれ、２本の上方及び２本の下方の、ス
リツトを設けられた、平行に相互に延びている棒
から成り立つており、この場合、両方の上方の棒
の相互の間隔が、両方の棒の相互の間隔よりもよ
り大きく、また、４本の棒が、それらの端部の領
域において支持体により不動に保持されており、
多数の半導体円板が、それらの縁領域がスリツト
の中に突出するようになつている半導体円板に対
する石英ガラス製の担体囲いにおいて、支持体
が、棒の各端部領域内において上方及び下方の棒
の間に棒に対して横方向に配置され且つこれらに
融合されている各１個の石英ガラス管から成り立
つていることを特徴とする担体囲い。 ２ すべての棒が、棒の端部からある与えられた
間隔にスリツトの無い領域を有しており、また、
上方の棒及び下方の棒の間に配置された石英ガラ
ス製の追加の保持管が、スリツトの無い領域にお
いて上方及び下方の棒に融合されている特許請求
の範囲第１項記載の担体囲い。 ３ 石英ガラス管及び追加の保持管の端部が、下
方に斜めに切断されている特許請求の範囲第１又
は２項記載の担体囲い。 ４ 両方の上方の棒が、それらの端部領域の中
に、それぞれ、貫通孔を有している特許請の範囲
第１、２又は３項記載の担体囲い。 ５ すべての棒が、周期的に繰り返される間隔
に、半導体円板に対するスリツトよりもより大き
な幅を有しているスリツトを有している特許請求
の範囲第１項〜４項のいずれかに記載の担体囲
い。[Claims] 1 Consists of two upper and two lower slotted rods extending parallel to each other, in which case the mutual contact between the two upper rods the spacing is greater than the mutual spacing of both bars, and the four bars are held immovably by supports in the region of their ends;
In a carrier enclosure made of quartz glass for semiconductor disks, in which a number of semiconductor disks are arranged in such a way that their edge regions protrude into the slit, a support is provided above and below in each end region of the rod. A carrier enclosure, characterized in that it consists of a quartz glass tube in each case arranged transversely to the rods between the rods and fused thereto. 2. All bars have an area without slits at a given distance from the end of the bar, and
2. A carrier enclosure according to claim 1, wherein an additional holding tube made of quartz glass arranged between the upper rod and the lower rod is fused to the upper and lower rods in the region without slits. 3. The carrier enclosure according to claim 1 or 2, wherein the ends of the quartz glass tube and the additional holding tube are cut obliquely downward. 4. A carrier enclosure according to claim 1, 2 or 3, wherein both upper bars each have a through hole in their end region. 5. According to any one of claims 1 to 4, all the rods have slits at periodically repeated intervals that have a wider width than the slits for the semiconductor disk. carrier enclosure.
JP5866081A 1980-08-16 1981-04-20 Carrier enclosure for semiconductor disc Granted JPS5737826A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19808021868 DE8021868U1 (en) 1980-08-16 1980-08-16 CARRIER HORDE FOR SEMICONDUCTOR DISCS

Publications (2)

Publication Number Publication Date
JPS5737826A JPS5737826A (en) 1982-03-02
JPS6141128B2 true JPS6141128B2 (en) 1986-09-12

Family

ID=6718055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5866081A Granted JPS5737826A (en) 1980-08-16 1981-04-20 Carrier enclosure for semiconductor disc

Country Status (4)

Country Link
JP (1) JPS5737826A (en)
DE (1) DE8021868U1 (en)
FR (1) FR2488731A1 (en)
GB (1) GB2082388B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844836U (en) * 1981-09-21 1983-03-25 日本電気ホームエレクトロニクス株式会社 Semiconductor manufacturing jig
EP0100539A3 (en) * 1982-07-30 1985-05-22 Tecnisco Ltd. Assembled device for supporting semiconductor wafers or the like
DE3419866C2 (en) * 1984-05-28 1986-06-26 Heraeus Quarzschmelze Gmbh, 6450 Hanau Carrier tray made of quartz glass for disk-shaped substrates
DE3440111C1 (en) * 1984-11-02 1986-05-15 Heraeus Quarzschmelze Gmbh, 6450 Hanau Carrier horde
DE3441887C1 (en) * 1984-11-16 1985-10-17 Heraeus Quarzschmelze Gmbh, 6450 Hanau Furnace for the heat treatment of semiconductor substrates
EP0267462A3 (en) * 1986-11-12 1990-01-31 Heraeus Amersil, Inc. Mass transferable semiconductor substrate processing and handling full shell carrier (boat)
DE3829159A1 (en) * 1988-08-27 1990-03-08 Westdeutsche Quarzschmelze Gmb Device for holding semiconductor wafers
EP0725978B1 (en) * 1994-08-31 2003-01-08 Heraeus Quarzglas GmbH & Co. KG Method of producing a quartz glass jig for the heat treatment of silicon wafers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068775A (en) * 1973-10-19 1975-06-09
JPS53133366A (en) * 1977-04-27 1978-11-21 Nec Corp Impurity diffusion method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068775A (en) * 1973-10-19 1975-06-09
JPS53133366A (en) * 1977-04-27 1978-11-21 Nec Corp Impurity diffusion method

Also Published As

Publication number Publication date
JPS5737826A (en) 1982-03-02
GB2082388A (en) 1982-03-03
DE8021868U1 (en) 1981-01-29
GB2082388B (en) 1984-05-23
FR2488731B3 (en) 1983-06-10
FR2488731A1 (en) 1982-02-19

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