IT7820149A0 - PROCESS FOR GROWING EPITAXIAL SEMICONDUCTOR FILM. - Google Patents

PROCESS FOR GROWING EPITAXIAL SEMICONDUCTOR FILM.

Info

Publication number
IT7820149A0
IT7820149A0 IT7820149A IT2014978A IT7820149A0 IT 7820149 A0 IT7820149 A0 IT 7820149A0 IT 7820149 A IT7820149 A IT 7820149A IT 2014978 A IT2014978 A IT 2014978A IT 7820149 A0 IT7820149 A0 IT 7820149A0
Authority
IT
Italy
Prior art keywords
semiconductor film
epitaxial semiconductor
growing epitaxial
growing
film
Prior art date
Application number
IT7820149A
Other languages
Italian (it)
Other versions
IT1109159B (en
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7820149A0 publication Critical patent/IT7820149A0/en
Application granted granted Critical
Publication of IT1109159B publication Critical patent/IT1109159B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
IT20149/78A 1977-05-26 1978-02-10 PROCESS FOR GROWING EPITAXIAL SEMICONDUCTIVE FILMS IT1109159B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80082777A 1977-05-26 1977-05-26

Publications (2)

Publication Number Publication Date
IT7820149A0 true IT7820149A0 (en) 1978-02-10
IT1109159B IT1109159B (en) 1985-12-16

Family

ID=25179475

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20149/78A IT1109159B (en) 1977-05-26 1978-02-10 PROCESS FOR GROWING EPITAXIAL SEMICONDUCTIVE FILMS

Country Status (6)

Country Link
JP (1) JPS53147462A (en)
CA (1) CA1102013A (en)
DE (1) DE2806766A1 (en)
FR (1) FR2391769A1 (en)
GB (1) GB1598051A (en)
IT (1) IT1109159B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2511709A1 (en) * 1981-08-21 1983-02-25 Thomson Csf Epitaxial reactor with molecular jets - using an oxygen reactive layer to give a high vacuum
JPS5957416A (en) * 1982-09-27 1984-04-03 Konishiroku Photo Ind Co Ltd Formation of compound semiconductor layer
GB8324779D0 (en) * 1982-09-29 1983-10-19 Nat Res Dev Depositing film onto substrate
DE3381302D1 (en) * 1982-12-16 1990-04-12 Fujitsu Ltd PRODUCTION OF A SEMICONDUCTOR COMPONENT BY MEANS OF MOLECULAR RADIATION EPITAXY.
JPS59123226A (en) * 1982-12-28 1984-07-17 Fujitsu Ltd Device for manufacturing semiconductor device
JPS6135510A (en) * 1984-07-27 1986-02-20 Agency Of Ind Science & Technol Molecular beam epitaxy growth method
JPS61177366A (en) * 1985-01-31 1986-08-09 Sharp Corp Production of ultrafine particle dispersed substrate
JPS61214511A (en) * 1985-03-20 1986-09-24 Sharp Corp Crystal growth method
JPS61218130A (en) * 1985-03-23 1986-09-27 Nippon Telegr & Teleph Corp <Ntt> Crystal growth method of compound semiconductor
EP0250603B1 (en) * 1985-12-09 1994-07-06 Nippon Telegraph and Telephone Corporation Process for forming thin film of compound semiconductor
JP2533501B2 (en) * 1986-09-26 1996-09-11 日本電信電話株式会社 Semiconductor epitaxial growth method
US4869776A (en) * 1986-07-29 1989-09-26 Sharp Kabushiki Kaisha Method for the growth of a compound semiconductor crystal
JP2671360B2 (en) * 1988-03-19 1997-10-29 富士通株式会社 Reactive gas etching method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615931A (en) * 1968-12-27 1971-10-26 Bell Telephone Labor Inc Technique for growth of epitaxial compound semiconductor films
US3949119A (en) * 1972-05-04 1976-04-06 Atomic Energy Of Canada Limited Method of gas doping of vacuum evaporated epitaxial silicon films
DE2313846A1 (en) * 1973-03-20 1974-10-03 Siemens Ag Gallium phosphide layer formed on silicon substrate - cleaned by heating in hydrogen atmos. to remove silicon oxide film

Also Published As

Publication number Publication date
JPS5528544B2 (en) 1980-07-29
DE2806766A1 (en) 1978-12-07
IT1109159B (en) 1985-12-16
CA1102013A (en) 1981-05-26
FR2391769A1 (en) 1978-12-22
FR2391769B1 (en) 1980-08-29
GB1598051A (en) 1981-09-16
JPS53147462A (en) 1978-12-22

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