JPS6138602B2 - - Google Patents
Info
- Publication number
- JPS6138602B2 JPS6138602B2 JP53105055A JP10505578A JPS6138602B2 JP S6138602 B2 JPS6138602 B2 JP S6138602B2 JP 53105055 A JP53105055 A JP 53105055A JP 10505578 A JP10505578 A JP 10505578A JP S6138602 B2 JPS6138602 B2 JP S6138602B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- varistor
- voltage
- present
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011521 glass Substances 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 11
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 3
- 239000013081 microcrystal Substances 0.000 claims description 3
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 claims description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 239000000654 additive Substances 0.000 description 7
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000007792 addition Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000000700 radioactive tracer Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10505578A JPS5533036A (en) | 1978-08-28 | 1978-08-28 | Glazed varister |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10505578A JPS5533036A (en) | 1978-08-28 | 1978-08-28 | Glazed varister |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5533036A JPS5533036A (en) | 1980-03-08 |
JPS6138602B2 true JPS6138602B2 (enrdf_load_stackoverflow) | 1986-08-30 |
Family
ID=14397290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10505578A Granted JPS5533036A (en) | 1978-08-28 | 1978-08-28 | Glazed varister |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5533036A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0834136B2 (ja) * | 1987-12-07 | 1996-03-29 | 日本碍子株式会社 | 電圧非直線抵抗体 |
-
1978
- 1978-08-28 JP JP10505578A patent/JPS5533036A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5533036A (en) | 1980-03-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3822798B2 (ja) | 電圧非直線抵抗体及び磁器組成物 | |
JPS5928962B2 (ja) | 厚膜バリスタの製造方法 | |
JP2012060099A (ja) | 高温動作酸化亜鉛サージ防止素子 | |
CN105859278A (zh) | 一种降低ZnO晶粒电阻率的压敏电阻陶瓷制备方法 | |
US4417227A (en) | Voltage-dependent resistor and method of producing such a resistor | |
JPS6138602B2 (enrdf_load_stackoverflow) | ||
CN110304905A (zh) | 一种铜钐为半导化的ntc热敏电阻材料及其制备方法 | |
JPS584801B2 (ja) | 厚膜バリスタを作る方法 | |
JP2005145809A (ja) | 酸化亜鉛系焼結体と酸化亜鉛バリスタおよび積層型酸化亜鉛バリスタ. | |
JP3757794B2 (ja) | サーミスタ用半導体磁器及びそれを用いたチップ型サーミスタ | |
JPS5912002B2 (ja) | 電圧非直線抵抗器とその製造方法 | |
CN116854461B (zh) | 一种低电阻老化率ptc陶瓷材料及其制备方法 | |
JPS6028121B2 (ja) | 電圧非直線抵抗器の製造方法 | |
JP2715718B2 (ja) | 電圧非直線抵抗体 | |
JP2531586B2 (ja) | 電圧非直線抵抗体 | |
JPS648442B2 (enrdf_load_stackoverflow) | ||
JP2715717B2 (ja) | 電圧非直線抵抗体 | |
JP2962056B2 (ja) | 電圧非直線抵抗体 | |
JP2580916B2 (ja) | 磁器組成物及びその製造方法 | |
JPS62268102A (ja) | 電圧非直線抵抗体 | |
JPS6138603B2 (enrdf_load_stackoverflow) | ||
JPH03195003A (ja) | 電圧非直線抵抗体 | |
CN110357586A (zh) | 一种一致性好的ntc热敏电阻材料及其制备方法 | |
JPH0379849B2 (enrdf_load_stackoverflow) | ||
JPS61101008A (ja) | 厚膜型正特性半導体素子の製造方法 |