JPS6135693B2 - - Google Patents

Info

Publication number
JPS6135693B2
JPS6135693B2 JP55187308A JP18730880A JPS6135693B2 JP S6135693 B2 JPS6135693 B2 JP S6135693B2 JP 55187308 A JP55187308 A JP 55187308A JP 18730880 A JP18730880 A JP 18730880A JP S6135693 B2 JPS6135693 B2 JP S6135693B2
Authority
JP
Japan
Prior art keywords
layer
alignment
mark
pattern
marks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55187308A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57112021A (en
Inventor
Shuzo Fujimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187308A priority Critical patent/JPS57112021A/ja
Priority to US06/331,477 priority patent/US4423127A/en
Priority to DE8181110535T priority patent/DE3170209D1/de
Priority to EP81110535A priority patent/EP0061536B1/en
Publication of JPS57112021A publication Critical patent/JPS57112021A/ja
Publication of JPS6135693B2 publication Critical patent/JPS6135693B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/5442—Marks applied to semiconductor devices or parts comprising non digital, non alphanumeric information, e.g. symbols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP55187308A 1980-12-29 1980-12-29 Manufacture of semiconductor device Granted JPS57112021A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP55187308A JPS57112021A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device
US06/331,477 US4423127A (en) 1980-12-29 1981-12-16 Method of manufacturing a semiconductor device
DE8181110535T DE3170209D1 (en) 1980-12-29 1981-12-17 Method of manufacturing a semiconductor device having improved alignment marks and alignment marks for said method
EP81110535A EP0061536B1 (en) 1980-12-29 1981-12-17 Method of manufacturing a semiconductor device having improved alignment marks and alignment marks for said method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187308A JPS57112021A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57112021A JPS57112021A (en) 1982-07-12
JPS6135693B2 true JPS6135693B2 (enrdf_load_stackoverflow) 1986-08-14

Family

ID=16203722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187308A Granted JPS57112021A (en) 1980-12-29 1980-12-29 Manufacture of semiconductor device

Country Status (4)

Country Link
US (1) US4423127A (enrdf_load_stackoverflow)
EP (1) EP0061536B1 (enrdf_load_stackoverflow)
JP (1) JPS57112021A (enrdf_load_stackoverflow)
DE (1) DE3170209D1 (enrdf_load_stackoverflow)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3336901A1 (de) * 1983-10-11 1985-04-18 Deutsche Itt Industries Gmbh, 7800 Freiburg Maskenmarkierung und substratmarkierung fuer ein verfahren zum justieren einer eine maskenmarkierung enthaltenden photomaske auf einer substratmarkierung
JPS62108206A (ja) * 1985-11-06 1987-05-19 Canon Inc カラ−フィルタ−の製造方法
JPS6336033U (enrdf_load_stackoverflow) * 1986-08-22 1988-03-08
GB8803171D0 (en) * 1988-02-11 1988-03-09 English Electric Valve Co Ltd Imaging apparatus
GB8806232D0 (en) * 1988-03-16 1988-04-13 Plessey Co Plc Vernier structure for flip chip bonded devices
JP2754609B2 (ja) * 1988-06-08 1998-05-20 日本電気株式会社 半導体装置の製造方法
JP3118899B2 (ja) * 1991-10-01 2000-12-18 日本電気株式会社 アライメントチェックパターン
US5503959A (en) * 1991-10-31 1996-04-02 Intel Corporation Lithographic technique for patterning a semiconductor device
US5407763A (en) * 1992-05-28 1995-04-18 Ceridian Corporation Mask alignment mark system
US5450109A (en) * 1993-03-24 1995-09-12 Hewlett-Packard Company Barrier alignment and process monitor for TIJ printheads
US5316984A (en) * 1993-03-25 1994-05-31 Vlsi Technology, Inc. Bright field wafer target
JP3693370B2 (ja) * 1994-10-18 2005-09-07 株式会社ルネサステクノロジ 重合わせ精度測定マーク
JP3420391B2 (ja) * 1995-06-20 2003-06-23 キヤノン株式会社 電気回路基板におけるアライメントマーク構造
KR100352836B1 (ko) * 1995-12-15 2002-12-16 주식회사 하이닉스반도체 반도체 소자의 중첩 정밀도 측정 마크
KR19980042190A (ko) * 1996-11-07 1998-08-17 요시다쇼이치로 위치검출용 마크, 마크 검출방법 및 그 장치, 및 노광장치
US6102516A (en) * 1997-03-17 2000-08-15 Lexmark International, Inc. Fiducial system and method for conducting an inspection to determine if a second element is properly aligned relative to a first element
AU3538599A (en) * 1998-04-28 1999-11-16 Nikon Corporation Exposure system and method of manufacturing micro device
US6228743B1 (en) 1998-05-04 2001-05-08 Motorola, Inc. Alignment method for semiconductor device
US6678032B1 (en) * 1999-07-22 2004-01-13 Koninklijke Philips Electronics N.V. Display device with alignment markers
US6612159B1 (en) * 1999-08-26 2003-09-02 Schlumberger Technologies, Inc. Overlay registration error measurement made simultaneously for more than two semiconductor wafer layers
US6498640B1 (en) * 1999-12-30 2002-12-24 Koninklijke Philips Electronics N.V. Method to measure alignment using latent image grating structures
US6856029B1 (en) * 2001-06-22 2005-02-15 Lsi Logic Corporation Process independent alignment marks
DE10137105A1 (de) * 2001-07-30 2003-02-27 Infineon Technologies Ag Halbleiteranordnung, Verfahren zum Herstellen einer solchen sowie Verwendung von Messmarken einer solchen
TW200407995A (en) * 2002-11-08 2004-05-16 Nanya Technology Corp Mark and method for multiple alignment
JP2005101150A (ja) * 2003-09-24 2005-04-14 Renesas Technology Corp アライメントマークの形成方法
US7737534B2 (en) * 2008-06-10 2010-06-15 Northrop Grumman Systems Corporation Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer
KR101136973B1 (ko) * 2008-12-11 2012-04-19 한국전자통신연구원 통합 보안 장치 및 통합 보안 방법
AT12737U1 (de) * 2010-09-17 2012-10-15 Austria Tech & System Tech Verfahren zum herstellen einer aus mehreren leiterplattenbereichen bestehenden leiterplatte sowie leiterplatte
US9627179B2 (en) 2015-03-26 2017-04-18 Doug Carson & Associates, Inc. Substrate alignment through detection of rotating timing pattern
US9953806B1 (en) 2015-03-26 2018-04-24 Doug Carson & Associates, Inc. Substrate alignment detection using circumferentially extending timing pattern
US10134624B2 (en) 2015-03-26 2018-11-20 Doug Carson & Associates, Inc. Substrate alignment detection using circumferentially extending timing pattern
US9806031B2 (en) * 2015-04-22 2017-10-31 United Microelectronics Corp. Monitor method for process control in a semiconductor fabrication process
JP6414141B2 (ja) * 2016-05-31 2018-10-31 日亜化学工業株式会社 発光装置
CN109856930B (zh) * 2017-11-30 2021-05-25 京东方科技集团股份有限公司 对准标记、基板及其制作方法、曝光对准方法
CN109141237B (zh) * 2018-08-20 2020-10-13 武汉华星光电半导体显示技术有限公司 一种检测器件的误测判断的方法及装置
CN113534626B (zh) * 2020-04-14 2024-07-16 中国科学院微电子研究所 用于套刻精度测量的标记系统及量测方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617267A (en) * 1969-04-24 1971-11-02 Itek Corp Process for forming a series of masters in register
US3783520A (en) * 1970-09-28 1974-01-08 Bell Telephone Labor Inc High accuracy alignment procedure utilizing moire patterns
GB1501158A (en) * 1974-05-13 1978-02-15 Siemens Ag Production of multilayer structures in semiconductor chip
JPS5534442A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Preparation of semiconductor device
US4309813A (en) * 1979-12-26 1982-01-12 Harris Corporation Mask alignment scheme for laterally and totally dielectrically isolated integrated circuits

Also Published As

Publication number Publication date
EP0061536B1 (en) 1985-04-24
JPS57112021A (en) 1982-07-12
DE3170209D1 (en) 1985-05-30
US4423127A (en) 1983-12-27
EP0061536A1 (en) 1982-10-06

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