JPS6135631B2 - - Google Patents
Info
- Publication number
- JPS6135631B2 JPS6135631B2 JP59223924A JP22392484A JPS6135631B2 JP S6135631 B2 JPS6135631 B2 JP S6135631B2 JP 59223924 A JP59223924 A JP 59223924A JP 22392484 A JP22392484 A JP 22392484A JP S6135631 B2 JPS6135631 B2 JP S6135631B2
- Authority
- JP
- Japan
- Prior art keywords
- potential
- data line
- memory
- dummy
- word line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 claims description 89
- 239000003990 capacitor Substances 0.000 claims description 16
- 230000008859 change Effects 0.000 claims description 15
- 238000007599 discharging Methods 0.000 claims description 10
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000003321 amplification Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59223924A JPS60242591A (ja) | 1984-10-26 | 1984-10-26 | メモリ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59223924A JPS60242591A (ja) | 1984-10-26 | 1984-10-26 | メモリ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58197693A Division JPS59107490A (ja) | 1983-10-24 | 1983-10-24 | メモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60242591A JPS60242591A (ja) | 1985-12-02 |
| JPS6135631B2 true JPS6135631B2 (enrdf_load_stackoverflow) | 1986-08-14 |
Family
ID=16805842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59223924A Granted JPS60242591A (ja) | 1984-10-26 | 1984-10-26 | メモリ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60242591A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4406527B2 (ja) | 2002-09-03 | 2010-01-27 | Ｏｋｉセミコンダクタ株式会社 | 半導体集積回路装置 |
-
1984
- 1984-10-26 JP JP59223924A patent/JPS60242591A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60242591A (ja) | 1985-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4161040A (en) | Data-in amplifier for an MISFET memory device having a clamped output except during the write operation | |
| US4503522A (en) | Dynamic type semiconductor monolithic memory | |
| US5243573A (en) | Sense amplifier for nonvolatile semiconductor storage devices | |
| JPH048878B2 (enrdf_load_stackoverflow) | ||
| JP2002298586A (ja) | 半導体記憶装置のデータ書き込み方法及び半導体記憶装置 | |
| JPH0447584A (ja) | 半導体メモリ | |
| US4112508A (en) | Semiconductor memory | |
| JPH0713857B2 (ja) | 半導体記憶装置 | |
| JPS60239993A (ja) | ダイナミツク型半導体記憶装置 | |
| JPH0917183A (ja) | 半導体記憶装置 | |
| EP0124868A2 (en) | Semiconductor memory | |
| US4338679A (en) | Row driver circuit for semiconductor memory | |
| US5148399A (en) | Sense amplifier circuitry selectively separable from bit lines for dynamic random access memory | |
| JPS5922316B2 (ja) | ダイナミツクメモリ装置 | |
| KR950000501B1 (ko) | 반도체 기억장치 | |
| US4262341A (en) | Memory circuit | |
| JP2003272383A (ja) | Ｄｒａｍアレイ用ビット線プリチャージ手法およびセンスアンプ、ならびにｄｒａｍアレイを組込んだ集積回路装置 | |
| JPH06203575A (ja) | センスアンプ | |
| JPH0468718B2 (enrdf_load_stackoverflow) | ||
| US6535444B2 (en) | Dynamic random access memory device and process for controlling a read access of such a memory | |
| JP2000048576A (ja) | 半導体集積回路装置 | |
| JPS6135631B2 (enrdf_load_stackoverflow) | ||
| JPS5935114B2 (ja) | 増巾回路 | |
| JP2000195276A (ja) | 半導体記憶装置 | |
| JPS6137711B2 (enrdf_load_stackoverflow) |