JPS6134617B2 - - Google Patents
Info
- Publication number
- JPS6134617B2 JPS6134617B2 JP54153875A JP15387579A JPS6134617B2 JP S6134617 B2 JPS6134617 B2 JP S6134617B2 JP 54153875 A JP54153875 A JP 54153875A JP 15387579 A JP15387579 A JP 15387579A JP S6134617 B2 JPS6134617 B2 JP S6134617B2
- Authority
- JP
- Japan
- Prior art keywords
- source
- region
- drain
- electrode
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000008280 blood Substances 0.000 description 6
- 210000004369 blood Anatomy 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000004204 blood vessel Anatomy 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15387579A JPS5676042A (en) | 1979-11-28 | 1979-11-28 | Field effect transistor for ion sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15387579A JPS5676042A (en) | 1979-11-28 | 1979-11-28 | Field effect transistor for ion sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5676042A JPS5676042A (en) | 1981-06-23 |
| JPS6134617B2 true JPS6134617B2 (OSRAM) | 1986-08-08 |
Family
ID=15572014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15387579A Granted JPS5676042A (en) | 1979-11-28 | 1979-11-28 | Field effect transistor for ion sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5676042A (OSRAM) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0725688Y2 (ja) * | 1985-12-18 | 1995-06-07 | 新電元工業株式会社 | 半導体イオンセンサ |
| CN102290349A (zh) * | 2010-06-21 | 2011-12-21 | 无锡华润上华半导体有限公司 | 半导体结构及其形成方法 |
| GB201608758D0 (en) * | 2016-05-18 | 2016-06-29 | Dnae Group Holdings Ltd | Improvements in or relating to packaging for integrated circuits |
-
1979
- 1979-11-28 JP JP15387579A patent/JPS5676042A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5676042A (en) | 1981-06-23 |
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