JPS6152947B2 - - Google Patents

Info

Publication number

JPS6152947B2

JPS6152947B2 JP54153876A JP15387679A JPS6152947B2 JP S6152947 B2 JPS6152947 B2 JP S6152947B2 JP 54153876 A JP54153876 A JP 54153876A JP 15387679 A JP15387679 A JP 15387679A JP S6152947 B2 JPS6152947 B2 JP S6152947B2

Authority

JP

Japan

Prior art keywords

source

region

semiconductor substrate

drain region

polycrystalline silicon

Prior art date

1979-11-28

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
• 239000004065 semiconductor Substances 0.000 claims description 10
• 239000000758 substrate Substances 0.000 claims description 10
• 239000012535 impurity Substances 0.000 claims description 6
• 239000002131 composite material Substances 0.000 claims description 5
• 230000005669 field effect Effects 0.000 claims description 3
• 229920005591 polysilicon Polymers 0.000 description 10
• 238000009792 diffusion process Methods 0.000 description 8
• 239000008280 blood Substances 0.000 description 7
• 210000004369 blood Anatomy 0.000 description 7
• 239000013078 crystal Substances 0.000 description 3
• 229910052581 Si3N4 Inorganic materials 0.000 description 2
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
• 239000000460 chlorine Substances 0.000 description 2
• 230000007547 defect Effects 0.000 description 2
• 238000010586 diagram Methods 0.000 description 2
• 230000000694 effects Effects 0.000 description 2
• 239000003792 electrolyte Substances 0.000 description 2
• 150000002500 ions Chemical class 0.000 description 2
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
• 229910052814 silicon oxide Inorganic materials 0.000 description 2
• 239000011734 sodium Substances 0.000 description 2
• ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
• DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
• NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
• 229910004298 SiO 2 Inorganic materials 0.000 description 1
• 101150068246 V-MOS gene Proteins 0.000 description 1
• 210000004204 blood vessel Anatomy 0.000 description 1
• 238000003486 chemical etching Methods 0.000 description 1
• 238000005229 chemical vapour deposition Methods 0.000 description 1
• 229910052801 chlorine Inorganic materials 0.000 description 1
• 230000009545 invasion Effects 0.000 description 1
• WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
• 230000007774 longterm Effects 0.000 description 1
• 229910052751 metal Inorganic materials 0.000 description 1
• 239000002184 metal Substances 0.000 description 1
• 238000000034 method Methods 0.000 description 1
• 229910052710 silicon Inorganic materials 0.000 description 1
• 239000010703 silicon Substances 0.000 description 1
• 229910052708 sodium Inorganic materials 0.000 description 1
• -1 sodium (Na + ) Chemical class 0.000 description 1
• 239000000126 substance Substances 0.000 description 1