JPS6134261B2 - - Google Patents
Info
- Publication number
- JPS6134261B2 JPS6134261B2 JP51010661A JP1066176A JPS6134261B2 JP S6134261 B2 JPS6134261 B2 JP S6134261B2 JP 51010661 A JP51010661 A JP 51010661A JP 1066176 A JP1066176 A JP 1066176A JP S6134261 B2 JPS6134261 B2 JP S6134261B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- output
- charge pump
- mos
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 15
- 230000010355 oscillation Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 3
- 230000006870 function Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Landscapes
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplitude Modulation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1066176A JPS5294084A (en) | 1976-02-02 | 1976-02-02 | Integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1066176A JPS5294084A (en) | 1976-02-02 | 1976-02-02 | Integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5294084A JPS5294084A (en) | 1977-08-08 |
| JPS6134261B2 true JPS6134261B2 (enrdf_load_stackoverflow) | 1986-08-06 |
Family
ID=11756409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1066176A Granted JPS5294084A (en) | 1976-02-02 | 1976-02-02 | Integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5294084A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0620177B2 (ja) * | 1984-01-20 | 1994-03-16 | 株式会社東芝 | 半導体装置の内部バイアス発生回路 |
-
1976
- 1976-02-02 JP JP1066176A patent/JPS5294084A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5294084A (en) | 1977-08-08 |
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