JPS6132460A - 半導体注入集積論理回路装置の製造方法 - Google Patents
半導体注入集積論理回路装置の製造方法Info
- Publication number
- JPS6132460A JPS6132460A JP15251584A JP15251584A JPS6132460A JP S6132460 A JPS6132460 A JP S6132460A JP 15251584 A JP15251584 A JP 15251584A JP 15251584 A JP15251584 A JP 15251584A JP S6132460 A JPS6132460 A JP S6132460A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- buried
- type
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15251584A JPS6132460A (ja) | 1984-07-23 | 1984-07-23 | 半導体注入集積論理回路装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15251584A JPS6132460A (ja) | 1984-07-23 | 1984-07-23 | 半導体注入集積論理回路装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6132460A true JPS6132460A (ja) | 1986-02-15 |
| JPH0439787B2 JPH0439787B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-06-30 |
Family
ID=15542130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15251584A Granted JPS6132460A (ja) | 1984-07-23 | 1984-07-23 | 半導体注入集積論理回路装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6132460A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7321678B2 (en) | 2001-12-13 | 2008-01-22 | Kabushiki Kaisha Nippon Conlux | Banknote identifying machine and banknote identifying method |
-
1984
- 1984-07-23 JP JP15251584A patent/JPS6132460A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7321678B2 (en) | 2001-12-13 | 2008-01-22 | Kabushiki Kaisha Nippon Conlux | Banknote identifying machine and banknote identifying method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0439787B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-06-30 |