JPS6131633B2 - - Google Patents
Info
- Publication number
- JPS6131633B2 JPS6131633B2 JP52118850A JP11885077A JPS6131633B2 JP S6131633 B2 JPS6131633 B2 JP S6131633B2 JP 52118850 A JP52118850 A JP 52118850A JP 11885077 A JP11885077 A JP 11885077A JP S6131633 B2 JPS6131633 B2 JP S6131633B2
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- layer
- region
- conductivity type
- isolation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002955 isolation Methods 0.000 claims description 21
- 238000005468 ion implantation Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000003595 mist Substances 0.000 description 7
- 238000002513 implantation Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Landscapes
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11885077A JPS5452483A (en) | 1977-10-03 | 1977-10-03 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11885077A JPS5452483A (en) | 1977-10-03 | 1977-10-03 | Semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5452483A JPS5452483A (en) | 1979-04-25 |
JPS6131633B2 true JPS6131633B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-07-21 |
Family
ID=14746675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11885077A Granted JPS5452483A (en) | 1977-10-03 | 1977-10-03 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5452483A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0770692B2 (ja) * | 1984-05-31 | 1995-07-31 | 富士通株式会社 | 半導体記憶装置 |
JPH027474A (ja) * | 1988-06-24 | 1990-01-11 | Sony Corp | 半導体装置 |
JP5044146B2 (ja) * | 2006-06-01 | 2012-10-10 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
JP6280747B2 (ja) | 2014-01-14 | 2018-02-14 | 三重富士通セミコンダクター株式会社 | 半導体集積回路装置及びその製造方法 |
-
1977
- 1977-10-03 JP JP11885077A patent/JPS5452483A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5452483A (en) | 1979-04-25 |