JPS6131390A - ＧａＡｓ液相エピタキシヤル成長法 - Google Patents

ＧａＡｓ液相エピタキシヤル成長法

Info

Publication number
JPS6131390A
JPS6131390A JP59149866A JP14986684A JPS6131390A JP S6131390 A JPS6131390 A JP S6131390A JP 59149866 A JP59149866 A JP 59149866A JP 14986684 A JP14986684 A JP 14986684A JP S6131390 A JPS6131390 A JP S6131390A
Authority
JP
Japan
Prior art keywords
gaas
melt
layer
substrate
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59149866A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0247435B2 (enExample
Inventor
Shoji Kuma
隈　彰二
Kazuhiro Kurata
倉田　一宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP59149866A priority Critical patent/JPS6131390A/ja
Publication of JPS6131390A publication Critical patent/JPS6131390A/ja
Publication of JPH0247435B2 publication Critical patent/JPH0247435B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP59149866A 1984-07-18 1984-07-18 ＧａＡｓ液相エピタキシヤル成長法 Granted JPS6131390A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59149866A JPS6131390A (ja) 1984-07-18 1984-07-18 ＧａＡｓ液相エピタキシヤル成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59149866A JPS6131390A (ja) 1984-07-18 1984-07-18 ＧａＡｓ液相エピタキシヤル成長法

Publications (2)

Publication Number Publication Date
JPS6131390A true JPS6131390A (ja) 1986-02-13
JPH0247435B2 JPH0247435B2 (enExample) 1990-10-19

Family

ID=15484363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59149866A Granted JPS6131390A (ja) 1984-07-18 1984-07-18 ＧａＡｓ液相エピタキシヤル成長法

Country Status (1)

Country Link
JP (1) JPS6131390A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63168748U (enExample) * 1987-04-24 1988-11-02

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63168748U (enExample) * 1987-04-24 1988-11-02

Also Published As

Publication number Publication date
JPH0247435B2 (enExample) 1990-10-19

Similar Documents

Publication Publication Date Title
JPH03236218A (ja) 化合物半導体装置およびその製造方法
GB1473485A (en) Method for growing crystals of iii-v compound semicon ductors
JPH0247435B2 (enExample)
JPS6129121A (ja) ＧａＡｓ液相エピタシヤル成長法
JPS58156598A (ja) 結晶成長法
JPS6129122A (ja) ＧａＡｓ液相エピタキシヤル成長法
JPH0372680A (ja) 半導体材料、光電子集積回路素子並びに材料の結晶成長法
JPS626338B2 (enExample)
JPS6325297A (ja) ド−ピングによる単結晶３−５半絶縁物質の製造方法
JPS57129899A (en) Manufacture of single crystal of 3-5 group compound semiconductor
JPS6430210A (en) Method for growing iii-v compound semiconductor
JPS60211912A (ja) 低転位半絶縁性基板
SU1599448A1 (ru) Способ выращивани эпитаксиальных слоев
SU639358A1 (ru) Способ получени р-п структур
JPH01154514A (ja) 分子線エピタキシャル成長法
JPS57106117A (en) Method for liquid phase epitaxial growth
JPS626336B2 (enExample)
JPS6321286A (ja) 異種基板上の化合物半導体エピタキシヤル成長方法
JPH07302740A (ja) 液相エピタキシャル成長用ＧａＡｓ単結晶基板
JPH0279422A (ja) 液相エピタキシヤル成長装置及び成長方法
JPS5920639B2 (ja) 液相エピタキシヤル成長方法
JPS6066423A (ja) 液相エピタキシャル成長方法
JPH0450280B2 (enExample)
JPS6020509A (ja) 液相エピタキシヤル成長方法
JPS52109866A (en) Liquid epitaxial growing method