JPS6129915B2 - - Google Patents

Info

Publication number
JPS6129915B2
JPS6129915B2 JP10989982A JP10989982A JPS6129915B2 JP S6129915 B2 JPS6129915 B2 JP S6129915B2 JP 10989982 A JP10989982 A JP 10989982A JP 10989982 A JP10989982 A JP 10989982A JP S6129915 B2 JPS6129915 B2 JP S6129915B2
Authority
JP
Japan
Prior art keywords
compound
gas
compound semiconductor
reaction chamber
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10989982A
Other languages
English (en)
Japanese (ja)
Other versions
JPS593099A (ja
Inventor
Yutaka Yoriume
Noryoshi Shibata
Noboru Takagi
Juichi Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10989982A priority Critical patent/JPS593099A/ja
Publication of JPS593099A publication Critical patent/JPS593099A/ja
Publication of JPS6129915B2 publication Critical patent/JPS6129915B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP10989982A 1982-06-28 1982-06-28 化合物半導体結晶成長法 Granted JPS593099A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10989982A JPS593099A (ja) 1982-06-28 1982-06-28 化合物半導体結晶成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10989982A JPS593099A (ja) 1982-06-28 1982-06-28 化合物半導体結晶成長法

Publications (2)

Publication Number Publication Date
JPS593099A JPS593099A (ja) 1984-01-09
JPS6129915B2 true JPS6129915B2 (cg-RX-API-DMAC7.html) 1986-07-10

Family

ID=14521977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10989982A Granted JPS593099A (ja) 1982-06-28 1982-06-28 化合物半導体結晶成長法

Country Status (1)

Country Link
JP (1) JPS593099A (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0628236B2 (ja) * 1984-12-29 1994-04-13 ソニー株式会社 ガスの流量制御装置
JPH0657636B2 (ja) * 1985-05-29 1994-08-03 日本電信電話株式会社 化合物半導体薄膜形成法
JP2753009B2 (ja) * 1988-12-20 1998-05-18 富士通株式会社 化合物半導体の成長方法
WO2000079019A1 (en) * 1999-06-24 2000-12-28 Prasad Narhar Gadgil Apparatus for atomic layer chemical vapor deposition
JP2005322668A (ja) * 2004-05-06 2005-11-17 Renesas Technology Corp 成膜装置および成膜方法

Also Published As

Publication number Publication date
JPS593099A (ja) 1984-01-09

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