JPS6129537B2 - - Google Patents
Info
- Publication number
- JPS6129537B2 JPS6129537B2 JP15800677A JP15800677A JPS6129537B2 JP S6129537 B2 JPS6129537 B2 JP S6129537B2 JP 15800677 A JP15800677 A JP 15800677A JP 15800677 A JP15800677 A JP 15800677A JP S6129537 B2 JPS6129537 B2 JP S6129537B2
- Authority
- JP
- Japan
- Prior art keywords
- buried layer
- layer
- conductivity type
- region
- buried
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000005247 gettering Methods 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910003923 SiC 4 Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000501 effect on contamination Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15800677A JPS5491079A (en) | 1977-12-28 | 1977-12-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15800677A JPS5491079A (en) | 1977-12-28 | 1977-12-28 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5491079A JPS5491079A (en) | 1979-07-19 |
| JPS6129537B2 true JPS6129537B2 (US20100012521A1-20100121-C00001.png) | 1986-07-07 |
Family
ID=15662186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15800677A Granted JPS5491079A (en) | 1977-12-28 | 1977-12-28 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5491079A (US20100012521A1-20100121-C00001.png) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57180145A (en) * | 1981-04-30 | 1982-11-06 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor integrated circuit device |
| JPH09232324A (ja) * | 1996-02-23 | 1997-09-05 | Nec Corp | 半導体基板及びその製造方法 |
-
1977
- 1977-12-28 JP JP15800677A patent/JPS5491079A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5491079A (en) | 1979-07-19 |
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