JPS61294856A - 高耐圧半導体装置 - Google Patents
高耐圧半導体装置Info
- Publication number
- JPS61294856A JPS61294856A JP60135580A JP13558085A JPS61294856A JP S61294856 A JPS61294856 A JP S61294856A JP 60135580 A JP60135580 A JP 60135580A JP 13558085 A JP13558085 A JP 13558085A JP S61294856 A JPS61294856 A JP S61294856A
- Authority
- JP
- Japan
- Prior art keywords
- base
- collector
- central part
- concentration
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000015556 catabolic process Effects 0.000 claims description 6
- 230000005684 electric field Effects 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 abstract description 3
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60135580A JPS61294856A (ja) | 1985-06-21 | 1985-06-21 | 高耐圧半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60135580A JPS61294856A (ja) | 1985-06-21 | 1985-06-21 | 高耐圧半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61294856A true JPS61294856A (ja) | 1986-12-25 |
| JPH0466103B2 JPH0466103B2 (enrdf_load_stackoverflow) | 1992-10-22 |
Family
ID=15155136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60135580A Granted JPS61294856A (ja) | 1985-06-21 | 1985-06-21 | 高耐圧半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61294856A (enrdf_load_stackoverflow) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5377473A (en) * | 1976-12-20 | 1978-07-08 | Philips Nv | Transistor and method of producing same |
| JPS5467383A (en) * | 1977-11-08 | 1979-05-30 | Nec Corp | Semiconductor device |
| JPS5598854A (en) * | 1979-01-24 | 1980-07-28 | Mitsubishi Electric Corp | Semiconductor device |
-
1985
- 1985-06-21 JP JP60135580A patent/JPS61294856A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5377473A (en) * | 1976-12-20 | 1978-07-08 | Philips Nv | Transistor and method of producing same |
| JPS5467383A (en) * | 1977-11-08 | 1979-05-30 | Nec Corp | Semiconductor device |
| JPS5598854A (en) * | 1979-01-24 | 1980-07-28 | Mitsubishi Electric Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0466103B2 (enrdf_load_stackoverflow) | 1992-10-22 |
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