JPH0466103B2 - - Google Patents

Info

Publication number
JPH0466103B2
JPH0466103B2 JP60135580A JP13558085A JPH0466103B2 JP H0466103 B2 JPH0466103 B2 JP H0466103B2 JP 60135580 A JP60135580 A JP 60135580A JP 13558085 A JP13558085 A JP 13558085A JP H0466103 B2 JPH0466103 B2 JP H0466103B2
Authority
JP
Japan
Prior art keywords
collector
region
conductivity type
base
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60135580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61294856A (ja
Inventor
Yoshitomo Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP60135580A priority Critical patent/JPS61294856A/ja
Publication of JPS61294856A publication Critical patent/JPS61294856A/ja
Publication of JPH0466103B2 publication Critical patent/JPH0466103B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP60135580A 1985-06-21 1985-06-21 高耐圧半導体装置 Granted JPS61294856A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60135580A JPS61294856A (ja) 1985-06-21 1985-06-21 高耐圧半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60135580A JPS61294856A (ja) 1985-06-21 1985-06-21 高耐圧半導体装置

Publications (2)

Publication Number Publication Date
JPS61294856A JPS61294856A (ja) 1986-12-25
JPH0466103B2 true JPH0466103B2 (enrdf_load_stackoverflow) 1992-10-22

Family

ID=15155136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60135580A Granted JPS61294856A (ja) 1985-06-21 1985-06-21 高耐圧半導体装置

Country Status (1)

Country Link
JP (1) JPS61294856A (enrdf_load_stackoverflow)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2374742A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche pour tensions elevees et son procede de fabrication
JPS5467383A (en) * 1977-11-08 1979-05-30 Nec Corp Semiconductor device
JPS5598854A (en) * 1979-01-24 1980-07-28 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS61294856A (ja) 1986-12-25

Similar Documents

Publication Publication Date Title
US4620211A (en) Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices
US4782379A (en) Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
US4611235A (en) Thyristor with turn-off FET
TW197532B (enrdf_load_stackoverflow)
EP0080044B1 (en) Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
JP3165480B2 (ja) ターンオフサイリスタ
JPS643347B2 (enrdf_load_stackoverflow)
JPH07120799B2 (ja) 半導体装置
US4170502A (en) Method of manufacturing a gate turn-off thyristor
JPH0466103B2 (enrdf_load_stackoverflow)
JPH02237162A (ja) 絶縁ゲートバイポーラトランジスタ
JPH0693511B2 (ja) 絶縁ゲ−ト半導体装置
JPS568873A (en) Bipolar transistor
JPS55105367A (en) Semiconductor device
JPS5713758A (en) Semiconductor device
RU2062532C1 (ru) Планарный переключающий полупроводниковый прибор
JP3068510B2 (ja) 半導体装置
JPS5788769A (en) Semiconductor device
JPS6159872A (ja) 半導体装置
JPS6232649A (ja) 双方向性電力ｆｅｔ
JP2701496B2 (ja) ｐチャネル型絶縁ゲートバイポーラトランジスタ
JP2521745Y2 (ja) フォトサイリスタ
JPH02304983A (ja) ｐチャネル絶縁ゲート型バイポーラトランジスタ
JPS5884459A (ja) 半導体装置
JPH02198175A (ja) 導電変調型ｍｏｓｆｅｔ