JPS6129140B2 - - Google Patents
Info
- Publication number
- JPS6129140B2 JPS6129140B2 JP58028232A JP2823283A JPS6129140B2 JP S6129140 B2 JPS6129140 B2 JP S6129140B2 JP 58028232 A JP58028232 A JP 58028232A JP 2823283 A JP2823283 A JP 2823283A JP S6129140 B2 JPS6129140 B2 JP S6129140B2
- Authority
- JP
- Japan
- Prior art keywords
- group compound
- compound semiconductor
- substrate
- gaas
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 30
- 150000001875 compounds Chemical class 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 14
- 229910052582 BN Inorganic materials 0.000 claims 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 11
- 238000002161 passivation Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 5
- 238000011109 contamination Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- -1 nitride group compound Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 210000003734 kidney Anatomy 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58028232A JPS58212139A (ja) | 1983-02-22 | 1983-02-22 | 3−5族化合物半導体素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58028232A JPS58212139A (ja) | 1983-02-22 | 1983-02-22 | 3−5族化合物半導体素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13582174A Division JPS5161265A (en) | 1974-11-25 | 1974-11-25 | 335 zokukagobutsuhandotaisoshi |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58212139A JPS58212139A (ja) | 1983-12-09 |
| JPS6129140B2 true JPS6129140B2 (enExample) | 1986-07-04 |
Family
ID=12242845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58028232A Granted JPS58212139A (ja) | 1983-02-22 | 1983-02-22 | 3−5族化合物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58212139A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6897565B2 (en) | 2001-10-09 | 2005-05-24 | Tessera, Inc. | Stacked packages |
| US6977440B2 (en) | 2001-10-09 | 2005-12-20 | Tessera, Inc. | Stacked packages |
| US7071547B2 (en) | 2002-09-11 | 2006-07-04 | Tessera, Inc. | Assemblies having stacked semiconductor chips and methods of making same |
| US7335995B2 (en) | 2001-10-09 | 2008-02-26 | Tessera, Inc. | Microelectronic assembly having array including passive elements and interconnects |
| US7545029B2 (en) | 2006-08-18 | 2009-06-09 | Tessera, Inc. | Stack microelectronic assemblies |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2674759B2 (ja) * | 1987-09-24 | 1997-11-12 | 日本電気株式会社 | 多層半導体ウェーハの製造方法 |
-
1983
- 1983-02-22 JP JP58028232A patent/JPS58212139A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6897565B2 (en) | 2001-10-09 | 2005-05-24 | Tessera, Inc. | Stacked packages |
| US6977440B2 (en) | 2001-10-09 | 2005-12-20 | Tessera, Inc. | Stacked packages |
| US7335995B2 (en) | 2001-10-09 | 2008-02-26 | Tessera, Inc. | Microelectronic assembly having array including passive elements and interconnects |
| US7071547B2 (en) | 2002-09-11 | 2006-07-04 | Tessera, Inc. | Assemblies having stacked semiconductor chips and methods of making same |
| US7545029B2 (en) | 2006-08-18 | 2009-06-09 | Tessera, Inc. | Stack microelectronic assemblies |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58212139A (ja) | 1983-12-09 |
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