JPS58212139A - ３−５族化合物半導体素子 - Google Patents
３−５族化合物半導体素子Info
- Publication number
- JPS58212139A JPS58212139A JP58028232A JP2823283A JPS58212139A JP S58212139 A JPS58212139 A JP S58212139A JP 58028232 A JP58028232 A JP 58028232A JP 2823283 A JP2823283 A JP 2823283A JP S58212139 A JPS58212139 A JP S58212139A
- Authority
- JP
- Japan
- Prior art keywords
- group compound
- substrate
- iii
- film
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 150000004767 nitrides Chemical class 0.000 claims abstract description 8
- 239000002131 composite material Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 20
- 239000000758 substrate Substances 0.000 abstract description 16
- 239000010409 thin film Substances 0.000 abstract description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 6
- 238000011109 contamination Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000010574 gas phase reaction Methods 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000000415 inactivating effect Effects 0.000 abstract 1
- 238000002161 passivation Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000002779 inactivation Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- -1 AIN group compound Chemical class 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 210000003734 kidney Anatomy 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- WHOPEPSOPUIRQQ-UHFFFAOYSA-N oxoaluminum Chemical compound O1[Al]O[Al]1 WHOPEPSOPUIRQQ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58028232A JPS58212139A (ja) | 1983-02-22 | 1983-02-22 | ３−５族化合物半導体素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58028232A JPS58212139A (ja) | 1983-02-22 | 1983-02-22 | ３−５族化合物半導体素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13582174A Division JPS5161265A (en) | 1974-11-25 | 1974-11-25 | 335 zokukagobutsuhandotaisoshi |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58212139A true JPS58212139A (ja) | 1983-12-09 |
| JPS6129140B2 JPS6129140B2 (enExample) | 1986-07-04 |
Family
ID=12242845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58028232A Granted JPS58212139A (ja) | 1983-02-22 | 1983-02-22 | ３−５族化合物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58212139A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6481325A (en) * | 1987-09-24 | 1989-03-27 | Nec Corp | Manufacture of multilayer semiconductor wafer |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10297316T5 (de) | 2001-10-09 | 2004-12-09 | Tessera, Inc., San Jose | Gestapelte Baugruppen |
| US6977440B2 (en) | 2001-10-09 | 2005-12-20 | Tessera, Inc. | Stacked packages |
| US7335995B2 (en) | 2001-10-09 | 2008-02-26 | Tessera, Inc. | Microelectronic assembly having array including passive elements and interconnects |
| US7071547B2 (en) | 2002-09-11 | 2006-07-04 | Tessera, Inc. | Assemblies having stacked semiconductor chips and methods of making same |
| US7545029B2 (en) | 2006-08-18 | 2009-06-09 | Tessera, Inc. | Stack microelectronic assemblies |
-
1983
- 1983-02-22 JP JP58028232A patent/JPS58212139A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6481325A (en) * | 1987-09-24 | 1989-03-27 | Nec Corp | Manufacture of multilayer semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6129140B2 (enExample) | 1986-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5247533A (en) | Gallium nitride group compound semiconductor laser diode | |
| JP3455512B2 (ja) | エピタキシャル成長用基板およびその製造方法 | |
| US6861663B2 (en) | Group III nitride compound semiconductor light-emitting device | |
| KR100319300B1 (ko) | 이종접합구조의 양자점 버퍼층을 가지는 반도체 소자 | |
| US6355951B1 (en) | Field effect semiconductor device | |
| JP2004296717A (ja) | 窒化物系半導体を含む積層体およびそれを用いた電子素子 | |
| JPS58212139A (ja) | ３−５族化合物半導体素子 | |
| KR930009805B1 (ko) | 반도체 층 성장으로 부터 결함을 제거하기 위한 버퍼구조를 갖는 반도체장치. | |
| US20060261367A1 (en) | Nitride semiconductor light emitting device | |
| US6593596B1 (en) | Semiconductor light emitting device and method for adjusting the luminous intensity thereof | |
| JPS63142682A (ja) | 電界効果半導体装置 | |
| JPH10189944A (ja) | 高電子移動度トランジスタ | |
| JPH11233824A (ja) | 窒化ガリウム系化合物半導体素子 | |
| US20040264248A1 (en) | Crystal growth method of nitride semiconductor | |
| JPS6298614A (ja) | 半導体装置 | |
| JP2956619B2 (ja) | Ｉｉｉ−ｖ族化合物半導体結晶の成長方法 | |
| JPH02196474A (ja) | 半導体受光素子 | |
| JPH10229051A (ja) | ＧａＮ系半導体装置とその製造方法 | |
| EP1024565A3 (en) | Method for fabricating a semiconductor optical device | |
| JP2694488B2 (ja) | 半導体基板及び半導体受発光素子 | |
| JPS61106497A (ja) | 燐化砒化ガリウムエピタキシヤル膜の成長方法 | |
| JPH0220086A (ja) | 半導体レーザ | |
| JP2893099B2 (ja) | Ｍｉｓ型高効率発光素子 | |
| US5686756A (en) | Compound field effect transistor having a conductive layer comprising a III-V group compound | |
| Turner et al. | Microwave MESFET's fabricated in GaAs layers grown on SOS Substrates |