JPS61287221A - 液相エピタキシヤル成長法および装置 - Google Patents
液相エピタキシヤル成長法および装置Info
- Publication number
- JPS61287221A JPS61287221A JP13033285A JP13033285A JPS61287221A JP S61287221 A JPS61287221 A JP S61287221A JP 13033285 A JP13033285 A JP 13033285A JP 13033285 A JP13033285 A JP 13033285A JP S61287221 A JPS61287221 A JP S61287221A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- chamber
- space
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007791 liquid phase Substances 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 13
- 239000000463 material Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000001816 cooling Methods 0.000 claims abstract description 9
- 238000007789 sealing Methods 0.000 claims abstract description 3
- 239000000155 melt Substances 0.000 claims description 37
- 239000013078 crystal Substances 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 18
- 229910052799 carbon Inorganic materials 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000012530 fluid Substances 0.000 description 5
- 101150110330 CRAT gene Proteins 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000001721 carbon Chemical class 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13033285A JPS61287221A (ja) | 1985-06-14 | 1985-06-14 | 液相エピタキシヤル成長法および装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13033285A JPS61287221A (ja) | 1985-06-14 | 1985-06-14 | 液相エピタキシヤル成長法および装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61287221A true JPS61287221A (ja) | 1986-12-17 |
| JPH0251248B2 JPH0251248B2 (enrdf_load_stackoverflow) | 1990-11-06 |
Family
ID=15031827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13033285A Granted JPS61287221A (ja) | 1985-06-14 | 1985-06-14 | 液相エピタキシヤル成長法および装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61287221A (enrdf_load_stackoverflow) |
-
1985
- 1985-06-14 JP JP13033285A patent/JPS61287221A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0251248B2 (enrdf_load_stackoverflow) | 1990-11-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |