JPH0571558B2 - - Google Patents
Info
- Publication number
- JPH0571558B2 JPH0571558B2 JP1208189A JP1208189A JPH0571558B2 JP H0571558 B2 JPH0571558 B2 JP H0571558B2 JP 1208189 A JP1208189 A JP 1208189A JP 1208189 A JP1208189 A JP 1208189A JP H0571558 B2 JPH0571558 B2 JP H0571558B2
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- substrate
- liquid phase
- ring
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 6
- -1 GaAs compound Chemical class 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 238000005192 partition Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 2
- 239000007791 liquid phase Substances 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 16
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1208189A JPH02192487A (ja) | 1989-01-21 | 1989-01-21 | 液相エピタキシャル成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1208189A JPH02192487A (ja) | 1989-01-21 | 1989-01-21 | 液相エピタキシャル成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02192487A JPH02192487A (ja) | 1990-07-30 |
| JPH0571558B2 true JPH0571558B2 (enrdf_load_stackoverflow) | 1993-10-07 |
Family
ID=11795635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1208189A Granted JPH02192487A (ja) | 1989-01-21 | 1989-01-21 | 液相エピタキシャル成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02192487A (enrdf_load_stackoverflow) |
-
1989
- 1989-01-21 JP JP1208189A patent/JPH02192487A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02192487A (ja) | 1990-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20030230231A1 (en) | Liquid-phase growth process and liquid-phase growth apparatus | |
| JPH0571558B2 (enrdf_load_stackoverflow) | ||
| US4261770A (en) | Process for producing epitaxial semiconductor material layers on monocrystalline substrates via liquid phase shift epitaxy | |
| US4390379A (en) | Elimination of edge growth in liquid phase epitaxy | |
| JP2599767B2 (ja) | 溶液成長装置 | |
| JPS6235998B2 (enrdf_load_stackoverflow) | ||
| US4412502A (en) | Apparatus for the elimination of edge growth in liquid phase epitaxy | |
| JP3515858B2 (ja) | 液相エピタキシャル成長用ボート | |
| JPH0930891A (ja) | 半導体液相エピタキシャル装置 | |
| JPS5812230B2 (ja) | エキソウエピタキシヤルセイチヨウホウホウ | |
| JPS59128297A (ja) | 液相エピタキシヤル成長法 | |
| JPH0419196B2 (enrdf_load_stackoverflow) | ||
| JPH0445238Y2 (enrdf_load_stackoverflow) | ||
| JPS5917241A (ja) | 液相成長方法 | |
| JPH03153596A (ja) | 液相エピタキシャル成長装置 | |
| JPH08316586A (ja) | Ｉｉ−ｖｉ 族化合物半導体単結晶体の転位密度測定方法 | |
| JPS5920639B2 (ja) | 液相エピタキシヤル成長方法 | |
| JPH043101B2 (enrdf_load_stackoverflow) | ||
| JPS61261291A (ja) | 液相エピタキシヤル成長方法およびそのための装置 | |
| JPH02196085A (ja) | 液相エピタキシャル成長方法 | |
| JPH0279422A (ja) | 液相エピタキシヤル成長装置及び成長方法 | |
| JPS59213699A (ja) | 液相エピタキシヤル成長方法 | |
| JPH0597574A (ja) | 液相エピタキシヤル成長装置及び成長方法 | |
| JPH08325091A (ja) | 半導体液相エピタキシャル装置 | |
| JPH03136236A (ja) | 液相エピタキシャル成長方法及び成長装置 |