JPH02192487A - 液相エピタキシャル成長方法 - Google Patents
液相エピタキシャル成長方法Info
- Publication number
- JPH02192487A JPH02192487A JP1208189A JP1208189A JPH02192487A JP H02192487 A JPH02192487 A JP H02192487A JP 1208189 A JP1208189 A JP 1208189A JP 1208189 A JP1208189 A JP 1208189A JP H02192487 A JPH02192487 A JP H02192487A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- epitaxial growth
- ring
- cassette
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 18
- 239000007791 liquid phase Substances 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 7
- 238000005192 partition Methods 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- -1 GaAs compound Chemical class 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 239000000155 melt Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 16
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1208189A JPH02192487A (ja) | 1989-01-21 | 1989-01-21 | 液相エピタキシャル成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1208189A JPH02192487A (ja) | 1989-01-21 | 1989-01-21 | 液相エピタキシャル成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02192487A true JPH02192487A (ja) | 1990-07-30 |
JPH0571558B2 JPH0571558B2 (enrdf_load_stackoverflow) | 1993-10-07 |
Family
ID=11795635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1208189A Granted JPH02192487A (ja) | 1989-01-21 | 1989-01-21 | 液相エピタキシャル成長方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02192487A (enrdf_load_stackoverflow) |
-
1989
- 1989-01-21 JP JP1208189A patent/JPH02192487A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0571558B2 (enrdf_load_stackoverflow) | 1993-10-07 |
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