JPS6235998B2 - - Google Patents

Info

Publication number
JPS6235998B2
JPS6235998B2 JP58000980A JP98083A JPS6235998B2 JP S6235998 B2 JPS6235998 B2 JP S6235998B2 JP 58000980 A JP58000980 A JP 58000980A JP 98083 A JP98083 A JP 98083A JP S6235998 B2 JPS6235998 B2 JP S6235998B2
Authority
JP
Japan
Prior art keywords
temperature
solution
epitaxial growth
wafer
jig
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58000980A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59128298A (ja
Inventor
Kazuhisa Ikeda
Takashi Shimoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP98083A priority Critical patent/JPS59128298A/ja
Publication of JPS59128298A publication Critical patent/JPS59128298A/ja
Publication of JPS6235998B2 publication Critical patent/JPS6235998B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/062—Vertical dipping system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP98083A 1983-01-06 1983-01-06 液相エピタキシヤル成長法 Granted JPS59128298A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP98083A JPS59128298A (ja) 1983-01-06 1983-01-06 液相エピタキシヤル成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP98083A JPS59128298A (ja) 1983-01-06 1983-01-06 液相エピタキシヤル成長法

Publications (2)

Publication Number Publication Date
JPS59128298A JPS59128298A (ja) 1984-07-24
JPS6235998B2 true JPS6235998B2 (enrdf_load_stackoverflow) 1987-08-05

Family

ID=11488751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP98083A Granted JPS59128298A (ja) 1983-01-06 1983-01-06 液相エピタキシヤル成長法

Country Status (1)

Country Link
JP (1) JPS59128298A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0748442B2 (ja) * 1989-03-24 1995-05-24 信越化学工業株式会社 単結晶磁性膜の製造方法
CN114705041B (zh) * 2022-06-07 2022-08-16 沈阳真空技术研究所有限公司 一种真空自耗炉结晶器冷却装置及其冷却方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998577A (enrdf_load_stackoverflow) * 1972-12-29 1974-09-18
JPS50109180A (enrdf_load_stackoverflow) * 1974-02-06 1975-08-28

Also Published As

Publication number Publication date
JPS59128298A (ja) 1984-07-24

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