JPS61287172A - 高融点金属ゲ−トｍｏｓ半導体装置の製造方法 - Google Patents
高融点金属ゲ−トｍｏｓ半導体装置の製造方法Info
- Publication number
- JPS61287172A JPS61287172A JP12723885A JP12723885A JPS61287172A JP S61287172 A JPS61287172 A JP S61287172A JP 12723885 A JP12723885 A JP 12723885A JP 12723885 A JP12723885 A JP 12723885A JP S61287172 A JPS61287172 A JP S61287172A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- polysilicon
- high melting
- point metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 44
- 229920005591 polysilicon Polymers 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 238000005468 ion implantation Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 11
- 150000004767 nitrides Chemical class 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000002844 melting Methods 0.000 claims description 24
- 230000008018 melting Effects 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000002513 implantation Methods 0.000 abstract description 5
- 230000004888 barrier function Effects 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 238000000059 patterning Methods 0.000 abstract description 2
- 230000006837 decompression Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 oxygen ion Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12723885A JPS61287172A (ja) | 1985-06-13 | 1985-06-13 | 高融点金属ゲ−トｍｏｓ半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12723885A JPS61287172A (ja) | 1985-06-13 | 1985-06-13 | 高融点金属ゲ−トｍｏｓ半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61287172A true JPS61287172A (ja) | 1986-12-17 |
| JPH0426554B2 JPH0426554B2 (enrdf_load_stackoverflow) | 1992-05-07 |
Family
ID=14955130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12723885A Granted JPS61287172A (ja) | 1985-06-13 | 1985-06-13 | 高融点金属ゲ−トｍｏｓ半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61287172A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01103873A (ja) * | 1987-06-23 | 1989-04-20 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
-
1985
- 1985-06-13 JP JP12723885A patent/JPS61287172A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01103873A (ja) * | 1987-06-23 | 1989-04-20 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0426554B2 (enrdf_load_stackoverflow) | 1992-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4149307A (en) | Process for fabricating insulated-gate field-effect transistors with self-aligned contacts | |
| TWI255007B (en) | Method of fabricating a semiconductor device having reduced contact resistance | |
| US4109372A (en) | Method for making an insulated gate field effect transistor utilizing a silicon gate and silicide interconnection vias | |
| JPS60220963A (ja) | 電界効果型集積構造体の形成方法 | |
| JPH01133368A (ja) | ポリシリコン・ゲートｆｅｔの形成方法 | |
| EP0106458B1 (en) | Method of manufacturing a semiconductor device including a mis field effect transistor | |
| JPH03218626A (ja) | 半導体装置の配線接触構造 | |
| US3899373A (en) | Method for forming a field effect device | |
| US4514893A (en) | Fabrication of FETs | |
| TW408475B (en) | Semiconductor device with silicide layers and fabrication method thereof | |
| US6570232B2 (en) | Local interconnect structure for integrated circuit devices, source structure for the same, and method for fabricating the same | |
| US4216573A (en) | Three mask process for making field effect transistors | |
| JPS61287172A (ja) | 高融点金属ゲ−トｍｏｓ半導体装置の製造方法 | |
| JPS627165A (ja) | 半導体装置の製造方法 | |
| JP3061027B2 (ja) | 半導体装置の製造方法 | |
| JP2677996B2 (ja) | 半導体装置 | |
| JPS6197975A (ja) | 半導体装置の製造方法 | |
| JPS59208772A (ja) | 半導体装置の製造方法 | |
| US20010019159A1 (en) | Local interconnect structure for integrated circuit devices, source structure for the same, and method for fabricating the same | |
| JP2511852B2 (ja) | 半導体装置の製造方法 | |
| JPH02106971A (ja) | 半導体集積回路装置の製造方法 | |
| JP2712230B2 (ja) | Ｍｏｓ型半導体装置の製造方法 | |
| JPH0427709B2 (enrdf_load_stackoverflow) | ||
| JPH0380542A (ja) | 半導体集積回路装置 | |
| JP2002270831A (ja) | 半導体装置の製造方法 |