JPH0426554B2 - - Google Patents
Info
- Publication number
- JPH0426554B2 JPH0426554B2 JP12723885A JP12723885A JPH0426554B2 JP H0426554 B2 JPH0426554 B2 JP H0426554B2 JP 12723885 A JP12723885 A JP 12723885A JP 12723885 A JP12723885 A JP 12723885A JP H0426554 B2 JPH0426554 B2 JP H0426554B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- polysilicon
- melting point
- oxide film
- point metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12723885A JPS61287172A (ja) | 1985-06-13 | 1985-06-13 | 高融点金属ゲ−トmos半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12723885A JPS61287172A (ja) | 1985-06-13 | 1985-06-13 | 高融点金属ゲ−トmos半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61287172A JPS61287172A (ja) | 1986-12-17 |
JPH0426554B2 true JPH0426554B2 (enrdf_load_stackoverflow) | 1992-05-07 |
Family
ID=14955130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12723885A Granted JPS61287172A (ja) | 1985-06-13 | 1985-06-13 | 高融点金属ゲ−トmos半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61287172A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01103873A (ja) * | 1987-06-23 | 1989-04-20 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
-
1985
- 1985-06-13 JP JP12723885A patent/JPS61287172A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61287172A (ja) | 1986-12-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4149307A (en) | Process for fabricating insulated-gate field-effect transistors with self-aligned contacts | |
KR900008207B1 (ko) | 반도체기억장치 | |
JPH0624226B2 (ja) | スタック形cmos装置の製造方法 | |
JPH0750276A (ja) | 異なる導電型の領域の間の接合に低抵抗コンタクトを製造する方法 | |
JPH03218626A (ja) | 半導体装置の配線接触構造 | |
JP4065985B2 (ja) | 半導体素子の形成方法 | |
JPS6046831B2 (ja) | 半導体装置の製造方法 | |
JPS5826184B2 (ja) | ゼツエンゲ−トデンカイコウカトランジスタノ セイゾウホウホウ | |
US5924001A (en) | Ion implantation for preventing polycide void | |
US6136717A (en) | Method for producing a via hole to a doped region | |
JPH04223341A (ja) | 半導体デバイスの製造方法及び金属ケイカ物層を自己整合的に形成する方法 | |
US5840618A (en) | Method of manufacturing semiconductor device using an amorphous material | |
JPH0426554B2 (enrdf_load_stackoverflow) | ||
JP3061027B2 (ja) | 半導体装置の製造方法 | |
US5021358A (en) | Semiconductor fabrication process using sacrificial oxidation to reduce tunnel formation during tungsten deposition | |
JPH04252072A (ja) | 半導体装置 | |
JPH0529343A (ja) | 微細半導体装置の製造方法 | |
JPH0235741A (ja) | 半導体装置およびその製造方法 | |
JPH0427709B2 (enrdf_load_stackoverflow) | ||
TW434707B (en) | Method for manufacturing high voltage and low voltage metal oxide semiconductor transistor using self-aligned silicide process | |
JPH10270569A (ja) | 半導体装置およびその製造方法 | |
JP2712230B2 (ja) | Mos型半導体装置の製造方法 | |
JPH02203565A (ja) | 半導体装置及びその製造方法 | |
KR960013635B1 (ko) | 트렌치형 캐패시터와 트랜지스터 연결을 위한 반도체 장치의 제조방법 | |
JP2000040808A (ja) | 半導体不揮発性記憶素子 |