JPS6127638A - 薄膜加工方法 - Google Patents
薄膜加工方法Info
- Publication number
- JPS6127638A JPS6127638A JP14891884A JP14891884A JPS6127638A JP S6127638 A JPS6127638 A JP S6127638A JP 14891884 A JP14891884 A JP 14891884A JP 14891884 A JP14891884 A JP 14891884A JP S6127638 A JPS6127638 A JP S6127638A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- patterns
- thin
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 84
- 238000003672 processing method Methods 0.000 title claims description 3
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000206 photolithography Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010931 gold Substances 0.000 abstract description 7
- 229910052737 gold Inorganic materials 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14891884A JPS6127638A (ja) | 1984-07-18 | 1984-07-18 | 薄膜加工方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14891884A JPS6127638A (ja) | 1984-07-18 | 1984-07-18 | 薄膜加工方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6127638A true JPS6127638A (ja) | 1986-02-07 |
| JPH0544827B2 JPH0544827B2 (cs) | 1993-07-07 |
Family
ID=15463568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14891884A Granted JPS6127638A (ja) | 1984-07-18 | 1984-07-18 | 薄膜加工方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6127638A (cs) |
-
1984
- 1984-07-18 JP JP14891884A patent/JPS6127638A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0544827B2 (cs) | 1993-07-07 |
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