JPS61263282A - 二次元電子電界効果型トランジスタの製造方法 - Google Patents

二次元電子電界効果型トランジスタの製造方法

Info

Publication number
JPS61263282A
JPS61263282A JP60103692A JP10369285A JPS61263282A JP S61263282 A JPS61263282 A JP S61263282A JP 60103692 A JP60103692 A JP 60103692A JP 10369285 A JP10369285 A JP 10369285A JP S61263282 A JPS61263282 A JP S61263282A
Authority
JP
Japan
Prior art keywords
layer
superlattice structure
gaas
field effect
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60103692A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0328064B2 (enExample
Inventor
Yoko Uchida
陽子 内田
Toshiaki Fukunaga
敏明 福永
Keisuke Kobayashi
啓介 小林
Hisao Nakajima
尚男 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60103692A priority Critical patent/JPS61263282A/ja
Publication of JPS61263282A publication Critical patent/JPS61263282A/ja
Publication of JPH0328064B2 publication Critical patent/JPH0328064B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP60103692A 1985-05-17 1985-05-17 二次元電子電界効果型トランジスタの製造方法 Granted JPS61263282A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60103692A JPS61263282A (ja) 1985-05-17 1985-05-17 二次元電子電界効果型トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60103692A JPS61263282A (ja) 1985-05-17 1985-05-17 二次元電子電界効果型トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS61263282A true JPS61263282A (ja) 1986-11-21
JPH0328064B2 JPH0328064B2 (enExample) 1991-04-17

Family

ID=14360830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60103692A Granted JPS61263282A (ja) 1985-05-17 1985-05-17 二次元電子電界効果型トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS61263282A (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607121A (ja) * 1983-06-24 1985-01-14 Nec Corp 超格子の構造
JPS6028274A (ja) * 1983-07-26 1985-02-13 Nec Corp 半導体装置
JPS6052062A (ja) * 1983-08-31 1985-03-23 Nec Corp 電界効果トランジスタ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607121A (ja) * 1983-06-24 1985-01-14 Nec Corp 超格子の構造
JPS6028274A (ja) * 1983-07-26 1985-02-13 Nec Corp 半導体装置
JPS6052062A (ja) * 1983-08-31 1985-03-23 Nec Corp 電界効果トランジスタ

Also Published As

Publication number Publication date
JPH0328064B2 (enExample) 1991-04-17

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term