JPS61263262A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS61263262A
JPS61263262A JP60105518A JP10551885A JPS61263262A JP S61263262 A JPS61263262 A JP S61263262A JP 60105518 A JP60105518 A JP 60105518A JP 10551885 A JP10551885 A JP 10551885A JP S61263262 A JPS61263262 A JP S61263262A
Authority
JP
Japan
Prior art keywords
potential
diffusion layer
integrated circuit
semiconductor substrate
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60105518A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0374509B2 (enExample
Inventor
Kiyonobu Hinooka
日野岡　清伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60105518A priority Critical patent/JPS61263262A/ja
Publication of JPS61263262A publication Critical patent/JPS61263262A/ja
Publication of JPH0374509B2 publication Critical patent/JPH0374509B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP60105518A 1985-05-17 1985-05-17 半導体集積回路装置 Granted JPS61263262A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60105518A JPS61263262A (ja) 1985-05-17 1985-05-17 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60105518A JPS61263262A (ja) 1985-05-17 1985-05-17 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS61263262A true JPS61263262A (ja) 1986-11-21
JPH0374509B2 JPH0374509B2 (enExample) 1991-11-27

Family

ID=14409818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60105518A Granted JPS61263262A (ja) 1985-05-17 1985-05-17 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS61263262A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109163A (ja) * 2003-09-30 2005-04-21 Nec Electronics Corp 半導体素子
JP2008177246A (ja) * 2007-01-16 2008-07-31 Nec Electronics Corp 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5639062A (en) * 1979-09-08 1981-04-14 Nippon Shinyaku Co Ltd Slufenamide derivative
JPS5848960A (ja) * 1982-09-03 1983-03-23 Hitachi Ltd 半導体装置
JPS5998552A (ja) * 1982-11-03 1984-06-06 ウエスチングハウス　エレクトリック　コ−ポレ−ション 電界効果形トランジスタ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5639062A (en) * 1979-09-08 1981-04-14 Nippon Shinyaku Co Ltd Slufenamide derivative
JPS5848960A (ja) * 1982-09-03 1983-03-23 Hitachi Ltd 半導体装置
JPS5998552A (ja) * 1982-11-03 1984-06-06 ウエスチングハウス　エレクトリック　コ−ポレ−ション 電界効果形トランジスタ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109163A (ja) * 2003-09-30 2005-04-21 Nec Electronics Corp 半導体素子
JP2008177246A (ja) * 2007-01-16 2008-07-31 Nec Electronics Corp 半導体装置

Also Published As

Publication number Publication date
JPH0374509B2 (enExample) 1991-11-27

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