JPS61263227A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS61263227A
JPS61263227A JP60105187A JP10518785A JPS61263227A JP S61263227 A JPS61263227 A JP S61263227A JP 60105187 A JP60105187 A JP 60105187A JP 10518785 A JP10518785 A JP 10518785A JP S61263227 A JPS61263227 A JP S61263227A
Authority
JP
Japan
Prior art keywords
wafer
etching
semiconductor wafer
mesa
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60105187A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0528492B2 (enExample
Inventor
Hideo Miyagi
宮城　秀雄
Hisatomo Kanazawa
金沢　久友
Isamu Kawashima
勇 川島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP60105187A priority Critical patent/JPS61263227A/ja
Publication of JPS61263227A publication Critical patent/JPS61263227A/ja
Publication of JPH0528492B2 publication Critical patent/JPH0528492B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/00—

Landscapes

  • Weting (AREA)
  • Dicing (AREA)
JP60105187A 1985-05-17 1985-05-17 半導体装置の製造方法 Granted JPS61263227A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60105187A JPS61263227A (ja) 1985-05-17 1985-05-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60105187A JPS61263227A (ja) 1985-05-17 1985-05-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61263227A true JPS61263227A (ja) 1986-11-21
JPH0528492B2 JPH0528492B2 (enExample) 1993-04-26

Family

ID=14400673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60105187A Granted JPS61263227A (ja) 1985-05-17 1985-05-17 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61263227A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0601298A1 (en) * 1992-12-09 1994-06-15 Motorola, Inc. Method for protecting the periphery of a semiconductor wafer during an etching step
WO2004104708A3 (en) * 2003-05-15 2005-08-18 3D Systems Inc Seal and support structure for semiconductor wafer
WO2013011548A1 (ja) * 2011-07-15 2013-01-24 富士電機株式会社 半導体装置の製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5016479A (enExample) * 1973-06-11 1975-02-21
JPS5713745A (en) * 1980-06-30 1982-01-23 Fujitsu Ltd Detecting method for ion etching finishing point
JPS5769751A (en) * 1980-10-17 1982-04-28 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS57100719A (en) * 1980-12-15 1982-06-23 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS57173940A (en) * 1981-04-17 1982-10-26 Omron Tateisi Electronics Co Mask for photoetching
JPS5832421A (ja) * 1981-08-20 1983-02-25 Nec Corp 半導体装置の製造方法
JPS5980940A (ja) * 1982-11-01 1984-05-10 Oki Electric Ind Co Ltd 絶縁物分離基板の製造方法
JPS59100563A (ja) * 1982-11-30 1984-06-09 Sharp Corp メサ型半導体装置の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5016479A (enExample) * 1973-06-11 1975-02-21
JPS5713745A (en) * 1980-06-30 1982-01-23 Fujitsu Ltd Detecting method for ion etching finishing point
JPS5769751A (en) * 1980-10-17 1982-04-28 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS57100719A (en) * 1980-12-15 1982-06-23 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS57173940A (en) * 1981-04-17 1982-10-26 Omron Tateisi Electronics Co Mask for photoetching
JPS5832421A (ja) * 1981-08-20 1983-02-25 Nec Corp 半導体装置の製造方法
JPS5980940A (ja) * 1982-11-01 1984-05-10 Oki Electric Ind Co Ltd 絶縁物分離基板の製造方法
JPS59100563A (ja) * 1982-11-30 1984-06-09 Sharp Corp メサ型半導体装置の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0601298A1 (en) * 1992-12-09 1994-06-15 Motorola, Inc. Method for protecting the periphery of a semiconductor wafer during an etching step
WO2004104708A3 (en) * 2003-05-15 2005-08-18 3D Systems Inc Seal and support structure for semiconductor wafer
WO2013011548A1 (ja) * 2011-07-15 2013-01-24 富士電機株式会社 半導体装置の製造方法
JPWO2013011548A1 (ja) * 2011-07-15 2015-02-23 富士電機株式会社 半導体装置の製造方法
US9240456B2 (en) 2011-07-15 2016-01-19 Fuji Electric Co., Ltd. Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH0528492B2 (enExample) 1993-04-26

Similar Documents

Publication Publication Date Title
JPH1064901A (ja) 半導体チップパッケージ素子
US4073055A (en) Method for manufacturing semiconductor devices
JPH02270342A (ja) 半導体装置の製造方法
US3980508A (en) Process of producing semiconductor device
JPS61501483A (ja) 埋込層の形成および位置づけ方法
JPS61263227A (ja) 半導体装置の製造方法
JPS6226839A (ja) 半導体基板
CN1211847C (zh) 在有源的电路之上敷金属焊盘
JPH0210730A (ja) 集積回路チップ上の電界効果トランジスタ用のフィールド・アイソレーション形成方法と構造
US6042899A (en) Method of manufacturing a thin-film magnetic device
US6777806B2 (en) Semiconductor device having no cracks in one or more layers underlying a metal line layer and method of manufacturing the same
JP3500813B2 (ja) 半導体ウエハの切断方法
JPH0366123A (ja) 半導体集積回路装置及びその形成方法
KR100244296B1 (ko) 반도체소자의 제조방법.
JP3510235B2 (ja) 半導体装置の製造方法
JPS59144123A (ja) 半導体集積回路装置の製造方法
JPS6224617A (ja) エピタキシヤル成長方法
JPH02137227A (ja) 半導体装置の製造方法
JPH0653204A (ja) 半導体装置の製造方法
JPS59100563A (ja) メサ型半導体装置の製造方法
JPH0287621A (ja) 半導体装置の製造方法
JPS62115832A (ja) 半導体装置のメサ溝形成方法
JPH01154518A (ja) 半導体装置
JPH06224160A (ja) 半導体装置の製造方法
JPH03236234A (ja) 半導体装置の製造方法