JPS5769751A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5769751A JPS5769751A JP55146090A JP14609080A JPS5769751A JP S5769751 A JPS5769751 A JP S5769751A JP 55146090 A JP55146090 A JP 55146090A JP 14609080 A JP14609080 A JP 14609080A JP S5769751 A JPS5769751 A JP S5769751A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- periphery
- center
- glass
- mesa groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To improve the good product ratio of semiconductor devices by electrodepositing a glass protective film on a mesa groove etched in advance at the center by an electrophoresis in the conductive state at equal potential to the center at the periphery of a wafer, thereby forming a glass film of uniform thickness. CONSTITUTION:A metallic plate 9 has a shape coinciding with the wafer periphery 1b except the pellet forming portion 1a of a wafer 1. Two plates 9 are intimately held via a wax 4 on the front and back surfaces of a wafer periphery 1b. This is dipped in electrodepositing solutiion 6. Positive and negative voltages are respectively applied to the electrode plate 7 and the metallic plate, and fine glass powder 8 in the solution is electrodeposited on the mesa groove exposed from the plate 9. In this manner, the difference of the electric field between the center and the periphery of the pellet forming portion can be reduced, thereby equalizing the thickness of the glass deposited on the mesa groove and improving the glassivation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55146090A JPS5769751A (en) | 1980-10-17 | 1980-10-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55146090A JPS5769751A (en) | 1980-10-17 | 1980-10-17 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5769751A true JPS5769751A (en) | 1982-04-28 |
Family
ID=15399902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55146090A Pending JPS5769751A (en) | 1980-10-17 | 1980-10-17 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5769751A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61263227A (en) * | 1985-05-17 | 1986-11-21 | Matsushita Electronics Corp | Manufacture of semiconductor device |
-
1980
- 1980-10-17 JP JP55146090A patent/JPS5769751A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61263227A (en) * | 1985-05-17 | 1986-11-21 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| JPH0528492B2 (en) * | 1985-05-17 | 1993-04-26 | Matsushita Electronics Corp |
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