JPS6126234B2 - - Google Patents
Info
- Publication number
- JPS6126234B2 JPS6126234B2 JP53025564A JP2556478A JPS6126234B2 JP S6126234 B2 JPS6126234 B2 JP S6126234B2 JP 53025564 A JP53025564 A JP 53025564A JP 2556478 A JP2556478 A JP 2556478A JP S6126234 B2 JPS6126234 B2 JP S6126234B2
- Authority
- JP
- Japan
- Prior art keywords
- recess
- oxidation
- film pattern
- semiconductor substrate
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 230000003647 oxidation Effects 0.000 claims description 16
- 238000007254 oxidation reaction Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 37
- 235000012239 silicon dioxide Nutrition 0.000 description 18
- 239000000377 silicon dioxide Substances 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- -1 arsenic ions Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Weting (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2556478A JPS54117691A (en) | 1978-03-06 | 1978-03-06 | Production of insulating gate-type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2556478A JPS54117691A (en) | 1978-03-06 | 1978-03-06 | Production of insulating gate-type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54117691A JPS54117691A (en) | 1979-09-12 |
| JPS6126234B2 true JPS6126234B2 (hu) | 1986-06-19 |
Family
ID=12169418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2556478A Granted JPS54117691A (en) | 1978-03-06 | 1978-03-06 | Production of insulating gate-type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54117691A (hu) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56133869A (en) * | 1980-03-24 | 1981-10-20 | Oki Electric Ind Co Ltd | Mos type semiconductor device and manufacture thereof |
| JPS5931067A (ja) * | 1982-08-14 | 1984-02-18 | Matsushita Electric Works Ltd | 縦型トランジスタの製法 |
| JP2615667B2 (ja) * | 1987-09-28 | 1997-06-04 | 日産自動車株式会社 | Ｍｏｓ電界効果トランジスタの製造方法 |
| US6528847B2 (en) * | 1998-06-29 | 2003-03-04 | Advanced Micro Devices, Inc. | Metal oxide semiconductor device having contoured channel region and elevated source and drain regions |
-
1978
- 1978-03-06 JP JP2556478A patent/JPS54117691A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54117691A (en) | 1979-09-12 |
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