JPS54117691A - Production of insulating gate-type semiconductor device - Google Patents
Production of insulating gate-type semiconductor deviceInfo
- Publication number
- JPS54117691A JPS54117691A JP2556478A JP2556478A JPS54117691A JP S54117691 A JPS54117691 A JP S54117691A JP 2556478 A JP2556478 A JP 2556478A JP 2556478 A JP2556478 A JP 2556478A JP S54117691 A JPS54117691 A JP S54117691A
- Authority
- JP
- Japan
- Prior art keywords
- film
- type
- region
- concave
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2556478A JPS54117691A (en) | 1978-03-06 | 1978-03-06 | Production of insulating gate-type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2556478A JPS54117691A (en) | 1978-03-06 | 1978-03-06 | Production of insulating gate-type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54117691A true JPS54117691A (en) | 1979-09-12 |
| JPS6126234B2 JPS6126234B2 (hu) | 1986-06-19 |
Family
ID=12169418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2556478A Granted JPS54117691A (en) | 1978-03-06 | 1978-03-06 | Production of insulating gate-type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54117691A (hu) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56133869A (en) * | 1980-03-24 | 1981-10-20 | Oki Electric Ind Co Ltd | Mos type semiconductor device and manufacture thereof |
| JPS5931067A (ja) * | 1982-08-14 | 1984-02-18 | Matsushita Electric Works Ltd | 縦型トランジスタの製法 |
| US5049512A (en) * | 1987-09-28 | 1991-09-17 | Nissan Motor Co., Ltd. | Method of forming a MOS field-effect transistor |
| US6528847B2 (en) * | 1998-06-29 | 2003-03-04 | Advanced Micro Devices, Inc. | Metal oxide semiconductor device having contoured channel region and elevated source and drain regions |
-
1978
- 1978-03-06 JP JP2556478A patent/JPS54117691A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56133869A (en) * | 1980-03-24 | 1981-10-20 | Oki Electric Ind Co Ltd | Mos type semiconductor device and manufacture thereof |
| JPS5931067A (ja) * | 1982-08-14 | 1984-02-18 | Matsushita Electric Works Ltd | 縦型トランジスタの製法 |
| US5049512A (en) * | 1987-09-28 | 1991-09-17 | Nissan Motor Co., Ltd. | Method of forming a MOS field-effect transistor |
| US6528847B2 (en) * | 1998-06-29 | 2003-03-04 | Advanced Micro Devices, Inc. | Metal oxide semiconductor device having contoured channel region and elevated source and drain regions |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6126234B2 (hu) | 1986-06-19 |
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