JPS6126157B2 - - Google Patents

Info

Publication number
JPS6126157B2
JPS6126157B2 JP56001004A JP100481A JPS6126157B2 JP S6126157 B2 JPS6126157 B2 JP S6126157B2 JP 56001004 A JP56001004 A JP 56001004A JP 100481 A JP100481 A JP 100481A JP S6126157 B2 JPS6126157 B2 JP S6126157B2
Authority
JP
Japan
Prior art keywords
mos transistor
type mos
transistor
drain
enhancement type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56001004A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57113489A (en
Inventor
Machio Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP100481A priority Critical patent/JPS57113489A/ja
Publication of JPS57113489A publication Critical patent/JPS57113489A/ja
Publication of JPS6126157B2 publication Critical patent/JPS6126157B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits

Landscapes

  • Read Only Memory (AREA)
JP100481A 1981-01-07 1981-01-07 Semiconductor storage device Granted JPS57113489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP100481A JPS57113489A (en) 1981-01-07 1981-01-07 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP100481A JPS57113489A (en) 1981-01-07 1981-01-07 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS57113489A JPS57113489A (en) 1982-07-14
JPS6126157B2 true JPS6126157B2 (enrdf_load_stackoverflow) 1986-06-19

Family

ID=11489427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP100481A Granted JPS57113489A (en) 1981-01-07 1981-01-07 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS57113489A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60246098A (ja) * 1984-05-04 1985-12-05 アドバンスト・マイクロ・デイバイシズ・インコーポレーテツド プログラマブルリードオンリメモリ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5589989A (en) * 1978-12-27 1980-07-08 Nec Corp Electrically erasable rom

Also Published As

Publication number Publication date
JPS57113489A (en) 1982-07-14

Similar Documents

Publication Publication Date Title
US4495693A (en) Method of integrating MOS devices of double and single gate structure
KR910000918B1 (ko) 불휘발성 반도체메모리
EP0301521B1 (en) Nonvolatile semiconductor memory device
JPS6239519B2 (enrdf_load_stackoverflow)
EP0361546B1 (en) Semiconductor memory device
JP2807256B2 (ja) 不揮発性半導体メモリ
US4037243A (en) Semi conductor memory cell utilizing sensing of variations in PN junction current conrolled by stored data
JPS63188896A (ja) 不揮発性半導体メモリ
US5550773A (en) Semiconductor memory having thin film field effect selection transistors
JP3191861B2 (ja) 不揮発性半導体メモリ装置及びその消去方法
JPS6325895A (ja) Ｅｐｒｏｍ又はｅｅｐｒｏｍメモリセルの読出しシステムの動作を検出するための装置
JPH0581069B2 (enrdf_load_stackoverflow)
JPH04256361A (ja) 半導体記憶装置
JPH0774318A (ja) 半導体集積回路
JP2655765B2 (ja) 半導体装置
US3875567A (en) Memory circuit using variable threshold level field-effect device
JPS6126157B2 (enrdf_load_stackoverflow)
JP2002521781A (ja) 抵抗性強誘電記憶セル
KR930006983B1 (ko) 불휘발성 반도체메모리장치
JP3306942B2 (ja) 不揮発性半導体記憶装置
JPS6235559A (ja) 半導体記憶装置
JPS60207385A (ja) 半導体記憶装置
JPS6321998B2 (enrdf_load_stackoverflow)
JPS6035758B2 (ja) 不揮発性半導体メモリ
JPH01128459A (ja) 不揮発性半導体メモリ