JPS61238962A - 膜形成装置 - Google Patents
膜形成装置Info
- Publication number
- JPS61238962A JPS61238962A JP60080515A JP8051585A JPS61238962A JP S61238962 A JPS61238962 A JP S61238962A JP 60080515 A JP60080515 A JP 60080515A JP 8051585 A JP8051585 A JP 8051585A JP S61238962 A JPS61238962 A JP S61238962A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- substrate
- accelerating
- vessel
- base body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60080515A JPS61238962A (ja) | 1985-04-16 | 1985-04-16 | 膜形成装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60080515A JPS61238962A (ja) | 1985-04-16 | 1985-04-16 | 膜形成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61238962A true JPS61238962A (ja) | 1986-10-24 |
| JPS644591B2 JPS644591B2 (enrdf_load_stackoverflow) | 1989-01-26 |
Family
ID=13720449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60080515A Granted JPS61238962A (ja) | 1985-04-16 | 1985-04-16 | 膜形成装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61238962A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011530155A (ja) * | 2008-08-04 | 2011-12-15 | エージーシー フラット グラス ノース アメリカ,インコーポレイテッド | プラズマ源、及びプラズマ強化化学蒸着を利用して薄膜被覆を堆積させる方法 |
| US9721764B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Method of producing plasma by multiple-phase alternating or pulsed electrical current |
| US9721765B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
| US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
| US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
| US10586685B2 (en) | 2014-12-05 | 2020-03-10 | Agc Glass Europe | Hollow cathode plasma source |
| US10755901B2 (en) | 2014-12-05 | 2020-08-25 | Agc Flat Glass North America, Inc. | Plasma source utilizing a macro-particle reduction coating and method of using a plasma source utilizing a macro-particle reduction coating for deposition of thin film coatings and modification of surfaces |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5521515A (en) * | 1978-07-31 | 1980-02-15 | Oyo Kagaku Kenkyusho | Surface treatment |
| JPS58112045A (ja) * | 1981-12-02 | 1983-07-04 | Konishiroku Photo Ind Co Ltd | 薄膜形成方法 |
| JPS59205471A (ja) * | 1983-05-02 | 1984-11-21 | Kowa Eng Kk | 被処理物品の表面に黒色被膜を形成する方法 |
| JPS60116781A (ja) * | 1983-11-28 | 1985-06-24 | Kyocera Corp | 高硬度窒化ホウ素膜の製造方法 |
| JPS61130487A (ja) * | 1984-11-29 | 1986-06-18 | Matsushita Electric Ind Co Ltd | プラズマ・インジエクシヨン・cvd装置 |
| JPS61136678A (ja) * | 1984-12-06 | 1986-06-24 | Matsushita Electric Ind Co Ltd | 高硬度炭素膜形成方法 |
-
1985
- 1985-04-16 JP JP60080515A patent/JPS61238962A/ja active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5521515A (en) * | 1978-07-31 | 1980-02-15 | Oyo Kagaku Kenkyusho | Surface treatment |
| JPS58112045A (ja) * | 1981-12-02 | 1983-07-04 | Konishiroku Photo Ind Co Ltd | 薄膜形成方法 |
| JPS59205471A (ja) * | 1983-05-02 | 1984-11-21 | Kowa Eng Kk | 被処理物品の表面に黒色被膜を形成する方法 |
| JPS60116781A (ja) * | 1983-11-28 | 1985-06-24 | Kyocera Corp | 高硬度窒化ホウ素膜の製造方法 |
| JPS61130487A (ja) * | 1984-11-29 | 1986-06-18 | Matsushita Electric Ind Co Ltd | プラズマ・インジエクシヨン・cvd装置 |
| JPS61136678A (ja) * | 1984-12-06 | 1986-06-24 | Matsushita Electric Ind Co Ltd | 高硬度炭素膜形成方法 |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10580624B2 (en) | 2008-08-04 | 2020-03-03 | Agc Flat Glass North America, Inc. | Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition |
| US20140216343A1 (en) | 2008-08-04 | 2014-08-07 | Agc Flat Glass North America, Inc. | Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition |
| US20150002021A1 (en) | 2008-08-04 | 2015-01-01 | Agc Flat Glass North America, Inc. | Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition |
| US20150004330A1 (en) | 2008-08-04 | 2015-01-01 | Agc Flat Glass North America, Inc. | Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition |
| JP2016006771A (ja) * | 2008-08-04 | 2016-01-14 | エージーシー フラット グラス ノース アメリカ,インコーポレイテッドAgc Flat Glass North America,Inc. | プラズマ源、及びプラズマ強化化学蒸着を利用して薄膜被覆を堆積させる方法 |
| US9478401B2 (en) | 2008-08-04 | 2016-10-25 | Agc Flat Glass North America, Inc. | Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition |
| US10580625B2 (en) | 2008-08-04 | 2020-03-03 | Agc Flat Glass North America, Inc. | Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition |
| JP2011530155A (ja) * | 2008-08-04 | 2011-12-15 | エージーシー フラット グラス ノース アメリカ,インコーポレイテッド | プラズマ源、及びプラズマ強化化学蒸着を利用して薄膜被覆を堆積させる方法 |
| JP2017214651A (ja) * | 2008-08-04 | 2017-12-07 | エージーシー フラット グラス ノース アメリカ,インコーポレイテッドAgc Flat Glass North America,Inc. | プラズマ源、及びプラズマ強化化学蒸着を利用して薄膜被覆を堆積させる方法 |
| JP2019083200A (ja) * | 2008-08-04 | 2019-05-30 | エージーシー フラット グラス ノース アメリカ,インコーポレイテッドAgc Flat Glass North America,Inc. | プラズマ源、及びプラズマ強化化学蒸着を利用して薄膜被覆を堆積させる方法 |
| US10438778B2 (en) | 2008-08-04 | 2019-10-08 | Agc Flat Glass North America, Inc. | Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition |
| US10586685B2 (en) | 2014-12-05 | 2020-03-10 | Agc Glass Europe | Hollow cathode plasma source |
| US10755901B2 (en) | 2014-12-05 | 2020-08-25 | Agc Flat Glass North America, Inc. | Plasma source utilizing a macro-particle reduction coating and method of using a plasma source utilizing a macro-particle reduction coating for deposition of thin film coatings and modification of surfaces |
| US11875976B2 (en) | 2014-12-05 | 2024-01-16 | Agc Flat Glass North America, Inc. | Plasma source utilizing a macro-particle reduction coating and method of using a plasma source utilizing a macro-particle reduction coating for deposition of thin film coatings and modification of surfaces |
| US20170309458A1 (en) | 2015-11-16 | 2017-10-26 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
| US10559452B2 (en) | 2015-11-16 | 2020-02-11 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
| US9721765B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
| US9721764B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Method of producing plasma by multiple-phase alternating or pulsed electrical current |
| US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
| US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS644591B2 (enrdf_load_stackoverflow) | 1989-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5712000A (en) | Large-scale, low pressure plasma-ion deposition of diamondlike carbon films | |
| CN1800441B (zh) | 等离子体增强薄膜沉积方法及装置 | |
| US4576829A (en) | Low temperature growth of silicon dioxide on silicon | |
| JPS63210099A (ja) | ダイヤモンド膜の作製方法 | |
| KR890002286A (ko) | 플라즈마 향상된 산화규소 부착방법 및 진공시스템 | |
| JPH0635323B2 (ja) | 表面処理方法 | |
| JPH0544041A (ja) | 被膜形成装置及び被膜形成方法 | |
| JPH02281734A (ja) | プラズマ表面処理法 | |
| JPS61238962A (ja) | 膜形成装置 | |
| JP2000068227A (ja) | 表面処理方法および装置 | |
| JPH02167891A (ja) | ダイヤモンド膜気相合成装置 | |
| CN100395371C (zh) | 微波等离子体增强弧辉渗镀涂层的装置及工艺 | |
| JPH03229886A (ja) | 大気圧グロープラズマエッチング方法 | |
| JPH0637704B2 (ja) | 高硬度炭素膜形成方法 | |
| JP2687129B2 (ja) | ダイヤモンド状薄膜の製造方法及び装置 | |
| JPS6350463A (ja) | イオンプレ−テイング方法とその装置 | |
| JPS6267822A (ja) | プラズマ処理装置 | |
| JP2687468B2 (ja) | 薄膜形成装置 | |
| JPH0530500B2 (enrdf_load_stackoverflow) | ||
| JPH04314864A (ja) | 基体表面のプラズマクリーニング方法 | |
| JPS63475A (ja) | ハイブリツドイオンプレ−テイング装置 | |
| JPS6187870A (ja) | コ−テイング膜の形成方法 | |
| JP2567843B2 (ja) | ハイブリツドイオンプレ−テイング方法とその装置 | |
| JPH02213481A (ja) | 薄膜形成装置 | |
| JPS63210006A (ja) | アモルフアスカ−ボン薄膜の形成方法 |