JPS61236691A - ダイヤモンドの気相合成法 - Google Patents
ダイヤモンドの気相合成法Info
- Publication number
- JPS61236691A JPS61236691A JP7485285A JP7485285A JPS61236691A JP S61236691 A JPS61236691 A JP S61236691A JP 7485285 A JP7485285 A JP 7485285A JP 7485285 A JP7485285 A JP 7485285A JP S61236691 A JPS61236691 A JP S61236691A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- diamond
- vacuum
- gas
- ultraviolet rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 37
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 36
- 230000015572 biosynthetic process Effects 0.000 title claims description 5
- 238000003786 synthesis reaction Methods 0.000 title claims description 5
- 239000012808 vapor phase Substances 0.000 title claims description 4
- 238000010894 electron beam technology Methods 0.000 claims abstract description 10
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 150000001722 carbon compounds Chemical class 0.000 claims description 4
- 238000001308 synthesis method Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 36
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052799 carbon Inorganic materials 0.000 abstract description 9
- 230000008021 deposition Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 22
- 239000010408 film Substances 0.000 description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- -1 thermally decomposed Substances 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000002194 synthesizing effect Effects 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000005469 synchrotron radiation Effects 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000029553 photosynthesis Effects 0.000 description 1
- 238000010672 photosynthesis Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000006257 total synthesis reaction Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7485285A JPS61236691A (ja) | 1985-04-09 | 1985-04-09 | ダイヤモンドの気相合成法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7485285A JPS61236691A (ja) | 1985-04-09 | 1985-04-09 | ダイヤモンドの気相合成法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61236691A true JPS61236691A (ja) | 1986-10-21 |
| JPH0518799B2 JPH0518799B2 (enrdf_load_stackoverflow) | 1993-03-12 |
Family
ID=13559261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7485285A Granted JPS61236691A (ja) | 1985-04-09 | 1985-04-09 | ダイヤモンドの気相合成法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61236691A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4882138A (en) * | 1987-03-30 | 1989-11-21 | Crystallume | Method for preparation of diamond ceramics |
| US5075095A (en) * | 1987-03-30 | 1991-12-24 | Crystallume | Method for preparation of diamond ceramics |
| US5346729A (en) * | 1993-05-17 | 1994-09-13 | Midwest Research Institute | Solar-induced chemical vapor deposition of diamond-type carbon films |
| US5387443A (en) * | 1992-07-09 | 1995-02-07 | Sumitomo Electric Industries, Ltd. | Laser CVD method for synthesizing diamond |
| US7255744B2 (en) | 2002-12-27 | 2007-08-14 | Sumitomo Electric Industries, Ltd. | Low-resistivity n-type semiconductor diamond and method of its manufacture |
-
1985
- 1985-04-09 JP JP7485285A patent/JPS61236691A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4882138A (en) * | 1987-03-30 | 1989-11-21 | Crystallume | Method for preparation of diamond ceramics |
| US5075095A (en) * | 1987-03-30 | 1991-12-24 | Crystallume | Method for preparation of diamond ceramics |
| US5387443A (en) * | 1992-07-09 | 1995-02-07 | Sumitomo Electric Industries, Ltd. | Laser CVD method for synthesizing diamond |
| US5346729A (en) * | 1993-05-17 | 1994-09-13 | Midwest Research Institute | Solar-induced chemical vapor deposition of diamond-type carbon films |
| WO1994026424A1 (en) * | 1993-05-17 | 1994-11-24 | Midwest Research Institute | Solar-induced chemical vapor deposition of diamond-type carbon films |
| US7255744B2 (en) | 2002-12-27 | 2007-08-14 | Sumitomo Electric Industries, Ltd. | Low-resistivity n-type semiconductor diamond and method of its manufacture |
| CN100337310C (zh) * | 2002-12-27 | 2007-09-12 | 住友电气工业株式会社 | 低电阻率n－型半导体金刚石及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0518799B2 (enrdf_load_stackoverflow) | 1993-03-12 |
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