JPS6122896B2 - - Google Patents
Info
- Publication number
- JPS6122896B2 JPS6122896B2 JP10679278A JP10679278A JPS6122896B2 JP S6122896 B2 JPS6122896 B2 JP S6122896B2 JP 10679278 A JP10679278 A JP 10679278A JP 10679278 A JP10679278 A JP 10679278A JP S6122896 B2 JPS6122896 B2 JP S6122896B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafer
- carbon
- measured
- silicon
- ppm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000000411 transmission spectrum Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 38
- 229910052710 silicon Inorganic materials 0.000 description 38
- 239000010703 silicon Substances 0.000 description 38
- 235000012431 wafers Nutrition 0.000 description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 15
- 229910052799 carbon Inorganic materials 0.000 description 15
- 238000001228 spectrum Methods 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 238000011088 calibration curve Methods 0.000 description 7
- 238000004566 IR spectroscopy Methods 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000000516 activation analysis Methods 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000007430 reference method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10679278A JPS5533081A (en) | 1978-08-30 | 1978-08-30 | Method of measuring impurity amount in semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10679278A JPS5533081A (en) | 1978-08-30 | 1978-08-30 | Method of measuring impurity amount in semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5533081A JPS5533081A (en) | 1980-03-08 |
| JPS6122896B2 true JPS6122896B2 (enrdf_load_stackoverflow) | 1986-06-03 |
Family
ID=14442735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10679278A Granted JPS5533081A (en) | 1978-08-30 | 1978-08-30 | Method of measuring impurity amount in semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5533081A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04105046A (ja) * | 1990-08-27 | 1992-04-07 | Toshiba Ceramics Co Ltd | 引上シリコンウェーハの格子間酸素濃度測定方法 |
| JPH04109146A (ja) * | 1990-08-29 | 1992-04-10 | Toshiba Ceramics Co Ltd | 引上シリコンウェーハの置換型炭素濃度測定方法 |
| JP3178607B2 (ja) * | 1990-08-29 | 2001-06-25 | 東芝セラミックス株式会社 | 引上シリコンウェーハの置換型炭素濃度測定方法 |
-
1978
- 1978-08-30 JP JP10679278A patent/JPS5533081A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5533081A (en) | 1980-03-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Azumi et al. | Polarization of the luminescence of phenanthrene | |
| EP2015054B1 (en) | Terahertz Time-Domain Spectroscopy in Attenuated-Total-Reflection | |
| US20140354993A1 (en) | Localized surface plasmon resonance sensing system with anisotropic particles | |
| CN105092511A (zh) | 一种测量单晶硅代位碳和间隙氧含量的方法 | |
| JPS6122896B2 (enrdf_load_stackoverflow) | ||
| TWI592651B (zh) | 金屬離子檢測設備及金屬離子檢測方法 | |
| CN101187631A (zh) | 单轴晶体双折射率的测量方法 | |
| US6455853B2 (en) | Determination of thickness and impurity profiles in thin membranes utilizing spectorscopic data obtained from ellipsometric investigation of both front and back surfaces | |
| JP3465539B2 (ja) | 半導体シリコン結晶中の酸素濃度評価方法及び装置 | |
| JP2002340794A (ja) | 半導体ウェーハの赤外吸収測定法 | |
| JPH07502344A (ja) | 小容積サンプルセルのための無反射の偏光解析システム | |
| JP3816440B2 (ja) | シリコン酸化膜の評価方法及び半導体装置の製造方法 | |
| Tsuji et al. | Infrared optical constants and absorption intensities of naphthalene single crystal | |
| JP3046724B2 (ja) | ウエハの厚さ測定方法 | |
| JPH0749305A (ja) | シリコン単結晶中の格子間型酸素濃度測定装置および測定方法 | |
| Luttmann et al. | High accuracy IR ellipsometer working with a Ge Brewster angle reflection polarizer and grid analyzer | |
| JP2785848B2 (ja) | 結晶基板の内部歪み測定方法 | |
| Petrik et al. | Characterization of ZnO structures by optical and X-ray methods | |
| JPH0296639A (ja) | 赤外吸収スペクトル測定法及び測定用治具 | |
| Saleh et al. | Surface density measurement of pure element thin films by radioisotope x‐ray fluorescence spectroscopy | |
| Hatta et al. | THE MEASUREMENT OF INFRAREL REFLECTION-ABSORPTION SPECTRA OF THIN POLYVINYLACETATE FILMS FORMED ON SILICON SURFACES | |
| JP2006003285A (ja) | 基板表面の評価方法 | |
| Yaoming et al. | Spectral Sensitivity Analysis of OCD based on Muller Matrix Formulism | |
| JPH04194611A (ja) | Ｘ線回折法による膜厚測定方法 | |
| JPH0333642A (ja) | シリコン単結晶中の酸素析出量の測定方法 |