JPS6122896B2 - - Google Patents
Info
- Publication number
- JPS6122896B2 JPS6122896B2 JP10679278A JP10679278A JPS6122896B2 JP S6122896 B2 JPS6122896 B2 JP S6122896B2 JP 10679278 A JP10679278 A JP 10679278A JP 10679278 A JP10679278 A JP 10679278A JP S6122896 B2 JPS6122896 B2 JP S6122896B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafer
- carbon
- measured
- silicon
- ppm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000000411 transmission spectrum Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 38
- 229910052710 silicon Inorganic materials 0.000 description 38
- 239000010703 silicon Substances 0.000 description 38
- 235000012431 wafers Nutrition 0.000 description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 15
- 229910052799 carbon Inorganic materials 0.000 description 15
- 238000001228 spectrum Methods 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 238000011088 calibration curve Methods 0.000 description 7
- 238000004566 IR spectroscopy Methods 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000000516 activation analysis Methods 0.000 description 1
- 235000013405 beer Nutrition 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000007430 reference method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10679278A JPS5533081A (en) | 1978-08-30 | 1978-08-30 | Method of measuring impurity amount in semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10679278A JPS5533081A (en) | 1978-08-30 | 1978-08-30 | Method of measuring impurity amount in semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5533081A JPS5533081A (en) | 1980-03-08 |
| JPS6122896B2 true JPS6122896B2 (enrdf_load_stackoverflow) | 1986-06-03 |
Family
ID=14442735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10679278A Granted JPS5533081A (en) | 1978-08-30 | 1978-08-30 | Method of measuring impurity amount in semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5533081A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04105046A (ja) * | 1990-08-27 | 1992-04-07 | Toshiba Ceramics Co Ltd | 引上シリコンウェーハの格子間酸素濃度測定方法 |
| JP3178607B2 (ja) * | 1990-08-29 | 2001-06-25 | 東芝セラミックス株式会社 | 引上シリコンウェーハの置換型炭素濃度測定方法 |
| JPH04109146A (ja) * | 1990-08-29 | 1992-04-10 | Toshiba Ceramics Co Ltd | 引上シリコンウェーハの置換型炭素濃度測定方法 |
-
1978
- 1978-08-30 JP JP10679278A patent/JPS5533081A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5533081A (en) | 1980-03-08 |
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