JPS5533081A - Method of measuring impurity amount in semiconductor wafer - Google Patents
Method of measuring impurity amount in semiconductor waferInfo
- Publication number
- JPS5533081A JPS5533081A JP10679278A JP10679278A JPS5533081A JP S5533081 A JPS5533081 A JP S5533081A JP 10679278 A JP10679278 A JP 10679278A JP 10679278 A JP10679278 A JP 10679278A JP S5533081 A JPS5533081 A JP S5533081A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- silicon wafer
- parallelogram
- semiconductor wafer
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To sufficiently control the characteristics of a semiconductor device by breaking the parallelogram of silicon wafer and measuring the fine amount of C using infrared ray spectrum analysis. CONSTITUTION:When fine carbon in thin silicon wafer is measured by the conventional infrared ray spectrum analysis, interfering wave disturbs it to become impossible to estimate the sepctrum. However, the parallelogram of the wafer is broken to quantitatively measure the C in the silicon wafer of 2-4 inches in several hundred PPb order. Accordingly, since even consumer can notify the density of the impurities of the C in the wafer, the characteristics of the semiconductor device can be sufficiently controlled. This measuring method can be also applied to the measurement of other impurities such as O2 or the like of substitution type.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10679278A JPS5533081A (en) | 1978-08-30 | 1978-08-30 | Method of measuring impurity amount in semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10679278A JPS5533081A (en) | 1978-08-30 | 1978-08-30 | Method of measuring impurity amount in semiconductor wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5533081A true JPS5533081A (en) | 1980-03-08 |
JPS6122896B2 JPS6122896B2 (en) | 1986-06-03 |
Family
ID=14442735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10679278A Granted JPS5533081A (en) | 1978-08-30 | 1978-08-30 | Method of measuring impurity amount in semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5533081A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04105046A (en) * | 1990-08-27 | 1992-04-07 | Toshiba Ceramics Co Ltd | Measuring method for inter-lattice oxygen concentration of drawup silicon wafer |
JPH04109145A (en) * | 1990-08-29 | 1992-04-10 | Toshiba Ceramics Co Ltd | Substitution type carbon concentration measuring method for pickup silicone wafer |
JPH04109146A (en) * | 1990-08-29 | 1992-04-10 | Toshiba Ceramics Co Ltd | Substitution type carbon concentration measuring method for pickup silicone wafer |
-
1978
- 1978-08-30 JP JP10679278A patent/JPS5533081A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04105046A (en) * | 1990-08-27 | 1992-04-07 | Toshiba Ceramics Co Ltd | Measuring method for inter-lattice oxygen concentration of drawup silicon wafer |
JPH04109145A (en) * | 1990-08-29 | 1992-04-10 | Toshiba Ceramics Co Ltd | Substitution type carbon concentration measuring method for pickup silicone wafer |
JPH04109146A (en) * | 1990-08-29 | 1992-04-10 | Toshiba Ceramics Co Ltd | Substitution type carbon concentration measuring method for pickup silicone wafer |
Also Published As
Publication number | Publication date |
---|---|
JPS6122896B2 (en) | 1986-06-03 |
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