JPS5533081A - Method of measuring impurity amount in semiconductor wafer - Google Patents

Method of measuring impurity amount in semiconductor wafer

Info

Publication number
JPS5533081A
JPS5533081A JP10679278A JP10679278A JPS5533081A JP S5533081 A JPS5533081 A JP S5533081A JP 10679278 A JP10679278 A JP 10679278A JP 10679278 A JP10679278 A JP 10679278A JP S5533081 A JPS5533081 A JP S5533081A
Authority
JP
Japan
Prior art keywords
wafer
silicon wafer
parallelogram
semiconductor wafer
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10679278A
Other languages
Japanese (ja)
Other versions
JPS6122896B2 (en
Inventor
Koji Yakeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP10679278A priority Critical patent/JPS5533081A/en
Publication of JPS5533081A publication Critical patent/JPS5533081A/en
Publication of JPS6122896B2 publication Critical patent/JPS6122896B2/ja
Granted legal-status Critical Current

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  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To sufficiently control the characteristics of a semiconductor device by breaking the parallelogram of silicon wafer and measuring the fine amount of C using infrared ray spectrum analysis. CONSTITUTION:When fine carbon in thin silicon wafer is measured by the conventional infrared ray spectrum analysis, interfering wave disturbs it to become impossible to estimate the sepctrum. However, the parallelogram of the wafer is broken to quantitatively measure the C in the silicon wafer of 2-4 inches in several hundred PPb order. Accordingly, since even consumer can notify the density of the impurities of the C in the wafer, the characteristics of the semiconductor device can be sufficiently controlled. This measuring method can be also applied to the measurement of other impurities such as O2 or the like of substitution type.
JP10679278A 1978-08-30 1978-08-30 Method of measuring impurity amount in semiconductor wafer Granted JPS5533081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10679278A JPS5533081A (en) 1978-08-30 1978-08-30 Method of measuring impurity amount in semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10679278A JPS5533081A (en) 1978-08-30 1978-08-30 Method of measuring impurity amount in semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS5533081A true JPS5533081A (en) 1980-03-08
JPS6122896B2 JPS6122896B2 (en) 1986-06-03

Family

ID=14442735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10679278A Granted JPS5533081A (en) 1978-08-30 1978-08-30 Method of measuring impurity amount in semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5533081A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04105046A (en) * 1990-08-27 1992-04-07 Toshiba Ceramics Co Ltd Measuring method for inter-lattice oxygen concentration of drawup silicon wafer
JPH04109145A (en) * 1990-08-29 1992-04-10 Toshiba Ceramics Co Ltd Substitution type carbon concentration measuring method for pickup silicone wafer
JPH04109146A (en) * 1990-08-29 1992-04-10 Toshiba Ceramics Co Ltd Substitution type carbon concentration measuring method for pickup silicone wafer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04105046A (en) * 1990-08-27 1992-04-07 Toshiba Ceramics Co Ltd Measuring method for inter-lattice oxygen concentration of drawup silicon wafer
JPH04109145A (en) * 1990-08-29 1992-04-10 Toshiba Ceramics Co Ltd Substitution type carbon concentration measuring method for pickup silicone wafer
JPH04109146A (en) * 1990-08-29 1992-04-10 Toshiba Ceramics Co Ltd Substitution type carbon concentration measuring method for pickup silicone wafer

Also Published As

Publication number Publication date
JPS6122896B2 (en) 1986-06-03

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