GB1014829A - Arrangements for measuring electrical properties of semiconductors - Google Patents
Arrangements for measuring electrical properties of semiconductorsInfo
- Publication number
- GB1014829A GB1014829A GB36236/62A GB3623662A GB1014829A GB 1014829 A GB1014829 A GB 1014829A GB 36236/62 A GB36236/62 A GB 36236/62A GB 3623662 A GB3623662 A GB 3623662A GB 1014829 A GB1014829 A GB 1014829A
- Authority
- GB
- United Kingdom
- Prior art keywords
- temperature
- semi
- conductor
- resistivity
- bridge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2637—Circuits therefor for testing other individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Measurement Of Resistance Or Impedance (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
1,014,829. Measuring electrical properties of semi-conductors. TEPAS INSTRUMENTS Inc. Sept. 24,1962 [Oct. 2, 1961], No. 36236/62. Heading G1U. An apparatus for measuring electrical properties of a semi-conductor comprises an impedance bridge which responds to the impedance of the semi-conductor, which is connected thereto,an arrangement for balancing the bridge when the semi-conductor is at a first reference temperature, and an arrangement for heating the semi-conductor to a second higher temperature to rebalance the bridge, the bridge being unbalanced between the first and second temperatures. Measurement of this second temperature yields information concerning the resistivity or impurity concentration of the semi-conductor. The resistivity of semi-conductor materials rises to a maximum at a particular temperature and then falls again with increasing temperature, the maximum resistivity and the temperature of occurrence thereof depending on the particular semi-conductor and impurity concentration therein. The temperature range from a reference temperture where the semi-conductor has a measured resistivity to the higher temperature where it has the same resistivity is also specific to a particular semi-conductor impurity combination, and a measurement of this range is used in the determination of an unknown resistivity. The semi-conductor 48 (Fig. 5) is mounted in a temperature chamber 40 with a thermocouple 50 positioned therein. The output from the thermocouple is fed to a temperature indicating instrument 56. The semi-conductor is connected in one arm of an A. C. bridge 44, the output of which is fed to an oscilloscope 46. The arrangement is calibrated by using several wafers of P-types germanium with different impurity concentrations and of known resistivity at a reference temperature. These are used in the apparatus in turn, the temperature of the enclosure 40 being adjusted to the reference temperature as shown on the indicator 56. The A.C. bridge is then adjusted until a balance is shown on the oscilloscope 46. This may conveniently be done by arranging that the oscilloscope displays a trace which is horizontal at balance, but inclined when out of balance, the direction of the inclination indicating the phase of the imbalance. The temperature of the enclosure is then raised until the bridge returns to balance, the temperature at which this occurs being noted. A curve is plotted for the several calibrating wafers, showing the resistivity at the reference temperature against the elevated temperature at which the resistivity returns to the same value. The procedure outlined above is then applied to an unknown sample and the rebalance temperature noted. The corresponding resistivity can then be read from the curve. The resistivity cannot be directly determined from the balance components of the A.C. bridge, since several unknown fixed resistances, such as the resistance of the semi-conductor mount, are in series with the semi-conductor resistance.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14233661A | 1961-10-02 | 1961-10-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1014829A true GB1014829A (en) | 1965-12-31 |
Family
ID=22499455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB36236/62A Expired GB1014829A (en) | 1961-10-02 | 1962-09-24 | Arrangements for measuring electrical properties of semiconductors |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE1214792B (en) |
FR (1) | FR1447909A (en) |
GB (1) | GB1014829A (en) |
MY (1) | MY6900250A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0311201A1 (en) * | 1987-10-05 | 1989-04-12 | Interuniversitair Microelektronica Centrum Vzw | A system of measuring a state density in a semi-conductor element and a method using this system |
CN107064642A (en) * | 2017-06-23 | 2017-08-18 | 东旭科技集团有限公司 | Resistivity test device and method |
CN114325283A (en) * | 2021-12-27 | 2022-04-12 | 哈尔滨工业大学 | Semiconductor performance test system under vacuum light irradiation condition and control method thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014211352B4 (en) * | 2014-06-13 | 2021-08-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Layer system and method for determining the specific resistance |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2790952A (en) * | 1953-05-18 | 1957-04-30 | Bell Telephone Labor Inc | Method of optically testing semiconductor junctions |
US2790141A (en) * | 1953-08-05 | 1957-04-23 | Motorola Inc | Semiconductor measuring system |
-
1962
- 1962-09-24 GB GB36236/62A patent/GB1014829A/en not_active Expired
- 1962-09-28 DE DET22794A patent/DE1214792B/en active Pending
- 1962-10-02 FR FR911021A patent/FR1447909A/en not_active Expired
-
1969
- 1969-12-30 MY MY250/69A patent/MY6900250A/en unknown
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0311201A1 (en) * | 1987-10-05 | 1989-04-12 | Interuniversitair Microelektronica Centrum Vzw | A system of measuring a state density in a semi-conductor element and a method using this system |
US5036273A (en) * | 1987-10-05 | 1991-07-30 | Interuniversitair Micro-Elektronica Centrum | System of measuring a state density in a semi-conductor element and a method using this system |
CN107064642A (en) * | 2017-06-23 | 2017-08-18 | 东旭科技集团有限公司 | Resistivity test device and method |
CN107064642B (en) * | 2017-06-23 | 2023-12-26 | 东旭光电科技股份有限公司 | Resistivity measuring device and method |
CN114325283A (en) * | 2021-12-27 | 2022-04-12 | 哈尔滨工业大学 | Semiconductor performance test system under vacuum light irradiation condition and control method thereof |
Also Published As
Publication number | Publication date |
---|---|
DE1214792B (en) | 1966-04-21 |
FR1447909A (en) | 1966-08-05 |
MY6900250A (en) | 1969-12-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3092998A (en) | Thermometers | |
US5295746A (en) | High resolution digital thermometer | |
US3431508A (en) | Ph detecting device using temperature compensated field-effect transistor differential amplifier | |
GB1014829A (en) | Arrangements for measuring electrical properties of semiconductors | |
US3780585A (en) | Cryogen temperature indicator | |
US3350635A (en) | Solar cell and test circuit | |
US2865202A (en) | Device for measuring and detecting thermal energy | |
US4114421A (en) | Apparatus for measuring the concentration of impurities within a substance | |
US3106086A (en) | Strain gage dilatometer | |
US3507152A (en) | Method and apparatus for low-inertia or inertia-free temperature measurement | |
US3225597A (en) | Portable pyrometer | |
Besley | Use of ceramic-encapsulated rhodium-iron alloy resistance thermometers below 80K: thermometric properties and stability | |
US1912242A (en) | Potentiometer device for testing and calibrating meters | |
US2995703A (en) | Thermistor matching | |
US2477526A (en) | Thermometric instrument for measuring impregnite in cloth | |
US3080745A (en) | Compensated bridge circuit | |
Mangum | Stability of small industrial platinum resistance thermometers | |
Sargeant | Note on the use of junction diodes as temperature sensors | |
Davis et al. | Linearization of silicon junction characteristics for temperature measurement | |
McDonald | Silicon diode temperature sensors for process systems | |
Solomons et al. | Electronic Recording Differential Potentiometer | |
SU585412A1 (en) | Device for measuring static deformations at varying temperatures | |
US3436660A (en) | Method and apparatus for determining the symmetry factor of a transistor | |
Evans et al. | Measurement of the coefficient of thermal expansion of solids and its precise variation with temperature | |
SU553483A1 (en) | Thermocouple graduation method |