JPS6122476B2 - - Google Patents
Info
- Publication number
- JPS6122476B2 JPS6122476B2 JP188980A JP188980A JPS6122476B2 JP S6122476 B2 JPS6122476 B2 JP S6122476B2 JP 188980 A JP188980 A JP 188980A JP 188980 A JP188980 A JP 188980A JP S6122476 B2 JPS6122476 B2 JP S6122476B2
- Authority
- JP
- Japan
- Prior art keywords
- island
- oxide film
- nitride film
- region
- impurity density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000004767 nitrides Chemical class 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 21
- 238000009792 diffusion process Methods 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 230000005669 field effect Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP188980A JPS56100479A (en) | 1980-01-11 | 1980-01-11 | Manufacture of electric field effect semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP188980A JPS56100479A (en) | 1980-01-11 | 1980-01-11 | Manufacture of electric field effect semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56100479A JPS56100479A (en) | 1981-08-12 |
| JPS6122476B2 true JPS6122476B2 (US20030204162A1-20031030-M00001.png) | 1986-05-31 |
Family
ID=11514136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP188980A Granted JPS56100479A (en) | 1980-01-11 | 1980-01-11 | Manufacture of electric field effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56100479A (US20030204162A1-20031030-M00001.png) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62198974U (US20030204162A1-20031030-M00001.png) * | 1986-06-09 | 1987-12-18 | ||
| JPH0574272U (ja) * | 1992-03-11 | 1993-10-12 | 吉村産業株式会社 | 釣 元 |
-
1980
- 1980-01-11 JP JP188980A patent/JPS56100479A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62198974U (US20030204162A1-20031030-M00001.png) * | 1986-06-09 | 1987-12-18 | ||
| JPH0574272U (ja) * | 1992-03-11 | 1993-10-12 | 吉村産業株式会社 | 釣 元 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56100479A (en) | 1981-08-12 |
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