JPS6122398B2 - - Google Patents

Info

Publication number
JPS6122398B2
JPS6122398B2 JP56014985A JP1498581A JPS6122398B2 JP S6122398 B2 JPS6122398 B2 JP S6122398B2 JP 56014985 A JP56014985 A JP 56014985A JP 1498581 A JP1498581 A JP 1498581A JP S6122398 B2 JPS6122398 B2 JP S6122398B2
Authority
JP
Japan
Prior art keywords
transistor
potential
word line
during standby
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56014985A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57130291A (en
Inventor
Shigeyoshi Watanabe
Sumio Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP1498581A priority Critical patent/JPS57130291A/ja
Priority to US06/344,049 priority patent/US4531202A/en
Publication of JPS57130291A publication Critical patent/JPS57130291A/ja
Publication of JPS6122398B2 publication Critical patent/JPS6122398B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits

Landscapes

  • Read Only Memory (AREA)
JP1498581A 1981-02-05 1981-02-05 Semiconductor nonvolatile read-only storage device Granted JPS57130291A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1498581A JPS57130291A (en) 1981-02-05 1981-02-05 Semiconductor nonvolatile read-only storage device
US06/344,049 US4531202A (en) 1981-02-05 1982-01-29 Semiconductor nonvolatile read only memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1498581A JPS57130291A (en) 1981-02-05 1981-02-05 Semiconductor nonvolatile read-only storage device

Publications (2)

Publication Number Publication Date
JPS57130291A JPS57130291A (en) 1982-08-12
JPS6122398B2 true JPS6122398B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-05-31

Family

ID=11876242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1498581A Granted JPS57130291A (en) 1981-02-05 1981-02-05 Semiconductor nonvolatile read-only storage device

Country Status (2)

Country Link
US (1) US4531202A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS57130291A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0666115B2 (ja) * 1983-09-26 1994-08-24 株式会社東芝 半導体記憶装置
JPS60113397A (ja) * 1983-11-24 1985-06-19 Fujitsu Ltd プログラマブルリ−ドオンリメモリ装置
US4565932A (en) * 1983-12-29 1986-01-21 Motorola, Inc. High voltage circuit for use in programming memory circuits (EEPROMs)
US4805150A (en) * 1984-12-25 1989-02-14 Kabushiki Kaisha Toshiba Programmable semiconductor memory device having grouped high voltage supply circuits for writing data
JP4421009B2 (ja) * 1999-06-02 2010-02-24 株式会社東芝 強誘電体メモリ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1502270A (en) * 1974-10-30 1978-03-01 Hitachi Ltd Word line driver circuit in memory circuit
JPS5319852U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1976-07-29 1978-02-20
JPS54152932A (en) * 1978-05-24 1979-12-01 Hitachi Ltd Write high-tension supply circuit
DE2855744C3 (de) * 1978-12-22 1982-02-18 Siemens AG, 1000 Berlin und 8000 München MOS-integrierte Schaltungsanordnung zur Unterdrückung von in Wortleitungstreibern von Halbleiterspeicher fließenden Ruheströmen
DE2952056C2 (de) * 1979-12-22 1981-11-26 Hewlett-Packard GmbH, 7030 Böblingen Schreib- und Leseschaltung für einen Speicher mit wahlfreiem Zugriff

Also Published As

Publication number Publication date
JPS57130291A (en) 1982-08-12
US4531202A (en) 1985-07-23

Similar Documents

Publication Publication Date Title
US4389705A (en) Semiconductor memory circuit with depletion data transfer transistor
JPH01140494A (ja) 半導体記憶装置の出力バッファ回路
JPH0612632B2 (ja) メモリ回路
CA1223352A (en) High-performance, high-density cmos decoder/driver circuit
US4817055A (en) Semiconductor memory circuit including bias voltage generator
US4549102A (en) Driver circuit having a bootstrap buffer circuit
US4910710A (en) Input circuit incorporated in a semiconductor device
JPS6122398B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA1160742A (en) Static ram memory cell
KR910006997A (ko) 기생용량에 의해 야기된 오동작을 방지하기 위한 eprom의 디코더 회로
JPS5873097A (ja) デコ−ダ−回路
US4309630A (en) Buffer circuitry
JPS6027118B2 (ja) 半導体メモリ装置
JP2550684B2 (ja) 半導体装置
US4802126A (en) Semiconductor memory device
JPS59117788A (ja) Ｅｐｒｏｍ装置
JPH0666116B2 (ja) 半導体記憶装置
JPH0318277B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6218993B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2605867B2 (ja) 半導体メモリ回路
JPS6161295A (ja) 半導体記憶装置
JPH0330238B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS61270921A (ja) デコ−ダ回路
JP2539593B2 (ja) 半導体メモリ回路
JPS59186196A (ja) 横型レシオレスｒｏｍ