JPS61222991A - ガリウム砒素単結晶の製造方法 - Google Patents
ガリウム砒素単結晶の製造方法Info
- Publication number
- JPS61222991A JPS61222991A JP60065504A JP6550485A JPS61222991A JP S61222991 A JPS61222991 A JP S61222991A JP 60065504 A JP60065504 A JP 60065504A JP 6550485 A JP6550485 A JP 6550485A JP S61222991 A JPS61222991 A JP S61222991A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- single crystal
- concentration
- dislocation
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 62
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000155 melt Substances 0.000 claims abstract description 27
- 238000010899 nucleation Methods 0.000 claims abstract description 9
- 238000005204 segregation Methods 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 239000011261 inert gas Substances 0.000 claims abstract description 5
- 239000003566 sealing material Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 19
- 230000000644 propagated effect Effects 0.000 abstract 1
- 238000004854 X-ray topography Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60065504A JPS61222991A (ja) | 1985-03-29 | 1985-03-29 | ガリウム砒素単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60065504A JPS61222991A (ja) | 1985-03-29 | 1985-03-29 | ガリウム砒素単結晶の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20202289A Division JPH03159998A (ja) | 1989-08-03 | 1989-08-03 | Ｉｎ添加無転位引上げガリウム砒素単結晶 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61222991A true JPS61222991A (ja) | 1986-10-03 |
| JPS6313960B2 JPS6313960B2 (enrdf_load_stackoverflow) | 1988-03-28 |
Family
ID=13288966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60065504A Granted JPS61222991A (ja) | 1985-03-29 | 1985-03-29 | ガリウム砒素単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61222991A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61261297A (ja) * | 1985-05-14 | 1986-11-19 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体単結晶の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53118771A (en) * | 1977-03-26 | 1978-10-17 | Omron Tateisi Electronics Co | Method of producing photoelectric detector |
| JPS5428070U (enrdf_load_stackoverflow) * | 1977-07-29 | 1979-02-23 |
-
1985
- 1985-03-29 JP JP60065504A patent/JPS61222991A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53118771A (en) * | 1977-03-26 | 1978-10-17 | Omron Tateisi Electronics Co | Method of producing photoelectric detector |
| JPS5428070U (enrdf_load_stackoverflow) * | 1977-07-29 | 1979-02-23 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61261297A (ja) * | 1985-05-14 | 1986-11-19 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体単結晶の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6313960B2 (enrdf_load_stackoverflow) | 1988-03-28 |
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