JPS61218135A - シリコン酸化膜の形成方法 - Google Patents
シリコン酸化膜の形成方法Info
- Publication number
- JPS61218135A JPS61218135A JP60059322A JP5932285A JPS61218135A JP S61218135 A JPS61218135 A JP S61218135A JP 60059322 A JP60059322 A JP 60059322A JP 5932285 A JP5932285 A JP 5932285A JP S61218135 A JPS61218135 A JP S61218135A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon oxide
- oxide film
- stock
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60059322A JPS61218135A (ja) | 1985-03-23 | 1985-03-23 | シリコン酸化膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60059322A JPS61218135A (ja) | 1985-03-23 | 1985-03-23 | シリコン酸化膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61218135A true JPS61218135A (ja) | 1986-09-27 |
| JPH0255940B2 JPH0255940B2 (enExample) | 1990-11-28 |
Family
ID=13110004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60059322A Granted JPS61218135A (ja) | 1985-03-23 | 1985-03-23 | シリコン酸化膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61218135A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006007313A3 (en) * | 2004-06-25 | 2006-04-20 | Applied Materials Inc | Improving water-barrier performance of an encapsulating film |
| US7183197B2 (en) | 2004-06-25 | 2007-02-27 | Applied Materials, Inc. | Water-barrier performance of an encapsulating film |
| US7214600B2 (en) | 2004-06-25 | 2007-05-08 | Applied Materials, Inc. | Method to improve transmittance of an encapsulating film |
| JP2018032760A (ja) * | 2016-08-25 | 2018-03-01 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
-
1985
- 1985-03-23 JP JP60059322A patent/JPS61218135A/ja active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006007313A3 (en) * | 2004-06-25 | 2006-04-20 | Applied Materials Inc | Improving water-barrier performance of an encapsulating film |
| US7183197B2 (en) | 2004-06-25 | 2007-02-27 | Applied Materials, Inc. | Water-barrier performance of an encapsulating film |
| US7214600B2 (en) | 2004-06-25 | 2007-05-08 | Applied Materials, Inc. | Method to improve transmittance of an encapsulating film |
| US7220687B2 (en) | 2004-06-25 | 2007-05-22 | Applied Materials, Inc. | Method to improve water-barrier performance by changing film surface morphology |
| JP2008504114A (ja) * | 2004-06-25 | 2008-02-14 | アプライド マテリアルズ インコーポレイテッド | カプセル化膜の遮水性能の改善 |
| US7504332B2 (en) | 2004-06-25 | 2009-03-17 | Applied Materials, Inc. | Water-barrier performance of an encapsulating film |
| KR101279914B1 (ko) * | 2004-06-25 | 2013-07-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 밀봉 필름의 차수 성능 개선 방법 및 장치 |
| JP2018032760A (ja) * | 2016-08-25 | 2018-03-01 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0255940B2 (enExample) | 1990-11-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI608122B (zh) | Chemical vapor deposition apparatus and method for producing chemical vapor deposition film | |
| EP1365042A1 (en) | Method for passivating a semiconductor substrate | |
| CN103229602B (zh) | 用于转换半导体层的方法 | |
| US6555257B1 (en) | Corrosion-resistant member, method of manufacturing the same and apparatus for heating corrosive substance | |
| JPS61218135A (ja) | シリコン酸化膜の形成方法 | |
| JP2008124111A (ja) | プラズマcvd法によるシリコン系薄膜の形成方法 | |
| JPS6331110A (ja) | 半導体装置の製造方法 | |
| JP3388651B2 (ja) | 絶縁膜の形成方法 | |
| JPH0142125B2 (enExample) | ||
| JPS6027122A (ja) | 光プラズマ気相反応法 | |
| JPS61194839A (ja) | シリコン酸化膜の形成方法 | |
| US20010041463A1 (en) | Electo-optical apparatus and method for fabricating a film, semiconductor device and memory device | |
| JPS5986214A (ja) | アモルフアス半導体の製造方法 | |
| JPH0250969A (ja) | 薄膜形成装置 | |
| JP4743730B2 (ja) | 熱プラズマcvdによるシリコン薄膜の堆積方法 | |
| JPH06302591A (ja) | 絶縁被膜および半導体装置の作製方法 | |
| JPH0546094B2 (enExample) | ||
| JP3272681B2 (ja) | 太陽電池の製造方法 | |
| JPS5927522A (ja) | アモルフアス半導体薄膜の製造方法 | |
| JPH0250967A (ja) | 薄膜形成方法と装置 | |
| JPS6281021A (ja) | 薄膜半導体製造装置 | |
| JPS62209831A (ja) | シリコン酸化膜の製造方法 | |
| CN117410352A (zh) | 一种抗烧结膜、晶体硅电池背面结构及其制备方法 | |
| JPS6043820A (ja) | プラズマ気相反応方法およびその製造装置 | |
| JP3367946B2 (ja) | 半導体装置の作製方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |