JPS61218135A - シリコン酸化膜の形成方法 - Google Patents

シリコン酸化膜の形成方法

Info

Publication number
JPS61218135A
JPS61218135A JP60059322A JP5932285A JPS61218135A JP S61218135 A JPS61218135 A JP S61218135A JP 60059322 A JP60059322 A JP 60059322A JP 5932285 A JP5932285 A JP 5932285A JP S61218135 A JPS61218135 A JP S61218135A
Authority
JP
Japan
Prior art keywords
gas
silicon oxide
oxide film
stock
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60059322A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0255940B2 (enExample
Inventor
Yuichi Masaki
裕一 正木
Toshiyuki Iwabuchi
岩渕 俊之
Mamoru Yoshida
守 吉田
Akira Uchiyama
章 内山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP60059322A priority Critical patent/JPS61218135A/ja
Publication of JPS61218135A publication Critical patent/JPS61218135A/ja
Publication of JPH0255940B2 publication Critical patent/JPH0255940B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Formation Of Insulating Films (AREA)
JP60059322A 1985-03-23 1985-03-23 シリコン酸化膜の形成方法 Granted JPS61218135A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60059322A JPS61218135A (ja) 1985-03-23 1985-03-23 シリコン酸化膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60059322A JPS61218135A (ja) 1985-03-23 1985-03-23 シリコン酸化膜の形成方法

Publications (2)

Publication Number Publication Date
JPS61218135A true JPS61218135A (ja) 1986-09-27
JPH0255940B2 JPH0255940B2 (enExample) 1990-11-28

Family

ID=13110004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60059322A Granted JPS61218135A (ja) 1985-03-23 1985-03-23 シリコン酸化膜の形成方法

Country Status (1)

Country Link
JP (1) JPS61218135A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006007313A3 (en) * 2004-06-25 2006-04-20 Applied Materials Inc Improving water-barrier performance of an encapsulating film
US7183197B2 (en) 2004-06-25 2007-02-27 Applied Materials, Inc. Water-barrier performance of an encapsulating film
US7214600B2 (en) 2004-06-25 2007-05-08 Applied Materials, Inc. Method to improve transmittance of an encapsulating film
JP2018032760A (ja) * 2016-08-25 2018-03-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006007313A3 (en) * 2004-06-25 2006-04-20 Applied Materials Inc Improving water-barrier performance of an encapsulating film
US7183197B2 (en) 2004-06-25 2007-02-27 Applied Materials, Inc. Water-barrier performance of an encapsulating film
US7214600B2 (en) 2004-06-25 2007-05-08 Applied Materials, Inc. Method to improve transmittance of an encapsulating film
US7220687B2 (en) 2004-06-25 2007-05-22 Applied Materials, Inc. Method to improve water-barrier performance by changing film surface morphology
JP2008504114A (ja) * 2004-06-25 2008-02-14 アプライド マテリアルズ インコーポレイテッド カプセル化膜の遮水性能の改善
US7504332B2 (en) 2004-06-25 2009-03-17 Applied Materials, Inc. Water-barrier performance of an encapsulating film
KR101279914B1 (ko) * 2004-06-25 2013-07-01 어플라이드 머티어리얼스, 인코포레이티드 밀봉 필름의 차수 성능 개선 방법 및 장치
JP2018032760A (ja) * 2016-08-25 2018-03-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0255940B2 (enExample) 1990-11-28

Similar Documents

Publication Publication Date Title
TWI608122B (zh) Chemical vapor deposition apparatus and method for producing chemical vapor deposition film
EP1365042A1 (en) Method for passivating a semiconductor substrate
CN103229602B (zh) 用于转换半导体层的方法
US6555257B1 (en) Corrosion-resistant member, method of manufacturing the same and apparatus for heating corrosive substance
JPS61218135A (ja) シリコン酸化膜の形成方法
JP2008124111A (ja) プラズマcvd法によるシリコン系薄膜の形成方法
JPS6331110A (ja) 半導体装置の製造方法
JP3388651B2 (ja) 絶縁膜の形成方法
JPH0142125B2 (enExample)
JPS6027122A (ja) 光プラズマ気相反応法
JPS61194839A (ja) シリコン酸化膜の形成方法
US20010041463A1 (en) Electo-optical apparatus and method for fabricating a film, semiconductor device and memory device
JPS5986214A (ja) アモルフアス半導体の製造方法
JPH0250969A (ja) 薄膜形成装置
JP4743730B2 (ja) 熱プラズマcvdによるシリコン薄膜の堆積方法
JPH06302591A (ja) 絶縁被膜および半導体装置の作製方法
JPH0546094B2 (enExample)
JP3272681B2 (ja) 太陽電池の製造方法
JPS5927522A (ja) アモルフアス半導体薄膜の製造方法
JPH0250967A (ja) 薄膜形成方法と装置
JPS6281021A (ja) 薄膜半導体製造装置
JPS62209831A (ja) シリコン酸化膜の製造方法
CN117410352A (zh) 一种抗烧结膜、晶体硅电池背面结构及其制备方法
JPS6043820A (ja) プラズマ気相反応方法およびその製造装置
JP3367946B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term