JPH0255940B2 - - Google Patents

Info

Publication number
JPH0255940B2
JPH0255940B2 JP60059322A JP5932285A JPH0255940B2 JP H0255940 B2 JPH0255940 B2 JP H0255940B2 JP 60059322 A JP60059322 A JP 60059322A JP 5932285 A JP5932285 A JP 5932285A JP H0255940 B2 JPH0255940 B2 JP H0255940B2
Authority
JP
Japan
Prior art keywords
silicon oxide
oxide film
gas
film
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60059322A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61218135A (ja
Inventor
Juichi Masaki
Toshuki Iwabuchi
Mamoru Yoshida
Akira Uchama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP60059322A priority Critical patent/JPS61218135A/ja
Publication of JPS61218135A publication Critical patent/JPS61218135A/ja
Publication of JPH0255940B2 publication Critical patent/JPH0255940B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Formation Of Insulating Films (AREA)
JP60059322A 1985-03-23 1985-03-23 シリコン酸化膜の形成方法 Granted JPS61218135A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60059322A JPS61218135A (ja) 1985-03-23 1985-03-23 シリコン酸化膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60059322A JPS61218135A (ja) 1985-03-23 1985-03-23 シリコン酸化膜の形成方法

Publications (2)

Publication Number Publication Date
JPS61218135A JPS61218135A (ja) 1986-09-27
JPH0255940B2 true JPH0255940B2 (enExample) 1990-11-28

Family

ID=13110004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60059322A Granted JPS61218135A (ja) 1985-03-23 1985-03-23 シリコン酸化膜の形成方法

Country Status (1)

Country Link
JP (1) JPS61218135A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7220687B2 (en) 2004-06-25 2007-05-22 Applied Materials, Inc. Method to improve water-barrier performance by changing film surface morphology
US7214600B2 (en) 2004-06-25 2007-05-08 Applied Materials, Inc. Method to improve transmittance of an encapsulating film
WO2006007313A2 (en) * 2004-06-25 2006-01-19 Applied Materials, Inc. Improving water-barrier performance of an encapsulating film
JP6713878B2 (ja) * 2016-08-25 2020-06-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS61218135A (ja) 1986-09-27

Similar Documents

Publication Publication Date Title
EP0572704A1 (en) Method for manufacturing a semiconductor device including method of reforming an insulating film formed by low temperature CVD
JPH1081973A (ja) 誘導結合形プラズマｃｖｄ装置
CN117410373A (zh) 一种晶硅底电池及其制备方法和叠层电池
US8735201B2 (en) Film-forming method for forming passivation film and manufacturing method for solar cell element
JP3249356B2 (ja) プラズマ化学蒸着装置
JP2000138384A (ja) 非晶質半導体素子及びその製造方法
JPH0255940B2 (enExample)
EP0030162B1 (en) Amorphous silicon mis device
JPS6331110A (ja) 半導体装置の製造方法
Weitzel et al. Preparation of glow discharge amorphous silicon for passivation layers
Garcia-Hernansanz et al. Deposition of intrinsic a-Si: H by ECR-CVD to passivate the crystalline silicon heterointerface in HIT solar cells
JPS61194839A (ja) シリコン酸化膜の形成方法
JPH11150283A (ja) 多結晶シリコン薄膜の製造方法
JPH06302591A (ja) 絶縁被膜および半導体装置の作製方法
JP3130661B2 (ja) 薄膜トランジスタ及びその製造方法
JP3272681B2 (ja) 太陽電池の製造方法
JPH0250969A (ja) 薄膜形成装置
JPS626348B2 (enExample)
Yamamoto et al. Anodic oxidation of a-Si: H films
Ganguly Reversing the Temperature Gradient in a PECVD Deposition Chamber to Alter the Radicals Generated in the Plasma
US4677249A (en) Photovoltaic device
JPS6281021A (ja) 薄膜半導体製造装置
JPH0837316A (ja) 非晶質半導体光電変換装置
JPH058268B2 (enExample)
JP3367946B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term