JPS61216316A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS61216316A
JPS61216316A JP60033862A JP3386285A JPS61216316A JP S61216316 A JPS61216316 A JP S61216316A JP 60033862 A JP60033862 A JP 60033862A JP 3386285 A JP3386285 A JP 3386285A JP S61216316 A JPS61216316 A JP S61216316A
Authority
JP
Japan
Prior art keywords
gaas
semiconductor layer
concentration
doped
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60033862A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0318733B2 (enExample
Inventor
Masahiko Sasa
佐々　誠彦
Kazuhiro Kondo
和博 近藤
Shunichi Muto
俊一 武藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60033862A priority Critical patent/JPS61216316A/ja
Priority to EP86400366A priority patent/EP0196245B1/en
Priority to DE8686400366T priority patent/DE3666646D1/de
Priority to KR1019860001253A priority patent/KR900001233B1/ko
Publication of JPS61216316A publication Critical patent/JPS61216316A/ja
Publication of JPH0318733B2 publication Critical patent/JPH0318733B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Junction Field-Effect Transistors (AREA)
JP60033862A 1985-02-22 1985-02-22 半導体装置の製造方法 Granted JPS61216316A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60033862A JPS61216316A (ja) 1985-02-22 1985-02-22 半導体装置の製造方法
EP86400366A EP0196245B1 (en) 1985-02-22 1986-02-21 Compound semiconductor layer having high carrier concentration and method of forming same
DE8686400366T DE3666646D1 (en) 1985-02-22 1986-02-21 Compound semiconductor layer having high carrier concentration and method of forming same
KR1019860001253A KR900001233B1 (ko) 1985-02-22 1986-02-22 고캐리어 농도를 갖는 화합물 반도체층 및 그의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60033862A JPS61216316A (ja) 1985-02-22 1985-02-22 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61216316A true JPS61216316A (ja) 1986-09-26
JPH0318733B2 JPH0318733B2 (enExample) 1991-03-13

Family

ID=12398309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60033862A Granted JPS61216316A (ja) 1985-02-22 1985-02-22 半導体装置の製造方法

Country Status (4)

Country Link
EP (1) EP0196245B1 (enExample)
JP (1) JPS61216316A (enExample)
KR (1) KR900001233B1 (enExample)
DE (1) DE3666646D1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6294923A (ja) * 1985-10-22 1987-05-01 Nec Corp 半導体材料への不純物ド−ピング方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2620268A1 (fr) * 1987-09-03 1989-03-10 Centre Nat Rech Scient Procede de dopage d'une couche semi-conductrice et transistor obtenu par ce procede
JP2586053B2 (ja) * 1987-09-25 1997-02-26 日本電気株式会社 電界効果トランジスタ
EP0525297A3 (en) * 1991-05-08 1993-10-06 Fujitsu Limited Method of growing doped crystal
US5888886A (en) * 1997-06-30 1999-03-30 Sdl, Inc. Method of doping gan layers p-type for device fabrication
CN112670356B (zh) * 2020-12-24 2023-05-12 湖南科莱特光电有限公司 单分子层内δ掺杂的半导体材料及其制备方法和探测器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5395571A (en) * 1977-02-02 1978-08-21 Hitachi Ltd Semiconductor device
JPS57164573A (en) * 1982-02-26 1982-10-09 Hitachi Ltd Semiconductor device
JPS5844774A (ja) * 1981-09-11 1983-03-15 Konishiroku Photo Ind Co Ltd アモルフアスシリコン半導体装置及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4882609A (en) * 1984-11-19 1989-11-21 Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. Semiconductor devices with at least one monoatomic layer of doping atoms

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5395571A (en) * 1977-02-02 1978-08-21 Hitachi Ltd Semiconductor device
JPS5844774A (ja) * 1981-09-11 1983-03-15 Konishiroku Photo Ind Co Ltd アモルフアスシリコン半導体装置及びその製造方法
JPS57164573A (en) * 1982-02-26 1982-10-09 Hitachi Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6294923A (ja) * 1985-10-22 1987-05-01 Nec Corp 半導体材料への不純物ド−ピング方法

Also Published As

Publication number Publication date
DE3666646D1 (en) 1989-11-30
JPH0318733B2 (enExample) 1991-03-13
KR900001233B1 (ko) 1990-03-05
EP0196245A1 (en) 1986-10-01
KR860006828A (ko) 1986-09-15
EP0196245B1 (en) 1989-10-25

Similar Documents

Publication Publication Date Title
US4663643A (en) Semiconductor device and process for producing the same
US5030580A (en) Method for producing a silicon carbide semiconductor device
GB2024506A (en) Ohmic contacts to n-type group iii-v semiconductors
JPS61216316A (ja) 半導体装置の製造方法
CN103474333A (zh) p型碲化锌单晶薄膜材料的掺杂方法
JP2004515919A (ja) 正極性にドープされた広い禁止帯を有する半導体の製法
EP0405832A1 (en) Doping procedures for semiconductor devices
JPH04233219A (ja) 半導体デバイスからなる製品の製造方法
JPS6362313A (ja) 半導体装置の製造方法
JPH02260628A (ja) 半導体デバイスの製造方法
US4032950A (en) Liquid phase epitaxial process for growing semi-insulating gaas layers
JP5954677B2 (ja) ＩＩＩ／ＶＳｉテンプレートの製造方法およびＩＩＩ／Ｖ半導体ベースの半導体部品をモノリシック集積化する方法
JPH0249422A (ja) 炭化珪素半導体装置の製造方法
JP2694260B2 (ja) 半導体素子
JPH025439A (ja) 半導体基板
JPS6329935A (ja) 多層薄膜構造
JPS61241972A (ja) 化合物半導体装置
JPS596054B2 (ja) 半導体素子の製造方法
JPH0272616A (ja) 分子線エピタキシャル成長法
JPH01161822A (ja) 素子およびその製造法
JPS63299164A (ja) ショットキ障壁型半導体装置
JPS61172379A (ja) 半導体装置の製造方法
JPH07315999A (ja) 化合物半導体の製造方法
JPH02183518A (ja) 半導体装置の製造方法
JPH0328064B2 (enExample)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term