KR900001233B1 - 고캐리어 농도를 갖는 화합물 반도체층 및 그의 제조방법 - Google Patents

고캐리어 농도를 갖는 화합물 반도체층 및 그의 제조방법 Download PDF

Info

Publication number
KR900001233B1
KR900001233B1 KR1019860001253A KR860001253A KR900001233B1 KR 900001233 B1 KR900001233 B1 KR 900001233B1 KR 1019860001253 A KR1019860001253 A KR 1019860001253A KR 860001253 A KR860001253 A KR 860001253A KR 900001233 B1 KR900001233 B1 KR 900001233B1
Authority
KR
South Korea
Prior art keywords
semiconductor layer
gaas
compound semiconductor
concentration
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019860001253A
Other languages
English (en)
Korean (ko)
Other versions
KR860006828A (ko
Inventor
시게히꼬 사사
가즈히로 곤도
스니찌 무또
Original Assignee
후지쓰가부시끼가이샤
야마모도 다꾸마
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쓰가부시끼가이샤, 야마모도 다꾸마 filed Critical 후지쓰가부시끼가이샤
Publication of KR860006828A publication Critical patent/KR860006828A/ko
Application granted granted Critical
Publication of KR900001233B1 publication Critical patent/KR900001233B1/ko
Expired legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Junction Field-Effect Transistors (AREA)
KR1019860001253A 1985-02-22 1986-02-22 고캐리어 농도를 갖는 화합물 반도체층 및 그의 제조방법 Expired KR900001233B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60-033862 1985-02-22
JP60033862A JPS61216316A (ja) 1985-02-22 1985-02-22 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR860006828A KR860006828A (ko) 1986-09-15
KR900001233B1 true KR900001233B1 (ko) 1990-03-05

Family

ID=12398309

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860001253A Expired KR900001233B1 (ko) 1985-02-22 1986-02-22 고캐리어 농도를 갖는 화합물 반도체층 및 그의 제조방법

Country Status (4)

Country Link
EP (1) EP0196245B1 (enExample)
JP (1) JPS61216316A (enExample)
KR (1) KR900001233B1 (enExample)
DE (1) DE3666646D1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6294923A (ja) * 1985-10-22 1987-05-01 Nec Corp 半導体材料への不純物ド−ピング方法
FR2620268A1 (fr) * 1987-09-03 1989-03-10 Centre Nat Rech Scient Procede de dopage d'une couche semi-conductrice et transistor obtenu par ce procede
JP2586053B2 (ja) * 1987-09-25 1997-02-26 日本電気株式会社 電界効果トランジスタ
EP0525297A3 (en) * 1991-05-08 1993-10-06 Fujitsu Limited Method of growing doped crystal
US5888886A (en) * 1997-06-30 1999-03-30 Sdl, Inc. Method of doping gan layers p-type for device fabrication
CN112670356B (zh) * 2020-12-24 2023-05-12 湖南科莱特光电有限公司 单分子层内δ掺杂的半导体材料及其制备方法和探测器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5915388B2 (ja) * 1977-02-02 1984-04-09 株式会社日立製作所 半導体装置
JPS5844774A (ja) * 1981-09-11 1983-03-15 Konishiroku Photo Ind Co Ltd アモルフアスシリコン半導体装置及びその製造方法
JPS57164573A (en) * 1982-02-26 1982-10-09 Hitachi Ltd Semiconductor device
US4882609A (en) * 1984-11-19 1989-11-21 Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. Semiconductor devices with at least one monoatomic layer of doping atoms

Also Published As

Publication number Publication date
DE3666646D1 (en) 1989-11-30
JPH0318733B2 (enExample) 1991-03-13
EP0196245A1 (en) 1986-10-01
JPS61216316A (ja) 1986-09-26
KR860006828A (ko) 1986-09-15
EP0196245B1 (en) 1989-10-25

Similar Documents

Publication Publication Date Title
US5962883A (en) Article comprising an oxide layer on a GaAs-based semiconductor body
US5281543A (en) Fabrication method for quantum devices in compound semiconductor layers
US6469357B1 (en) Article comprising an oxide layer on a GaAs or GaN-based semiconductor body
Mei et al. Grain‐growth mechanisms in polysilicon
US5051786A (en) Passivated polycrystalline semiconductors quantum well/superlattice structures fabricated thereof
WO2002041378A2 (en) Semiconductor structure and process for fabricating same
US4960728A (en) Homogenization anneal of II-VI compounds
Eisen Ion implantation in III–V compounds
US4914053A (en) Heteroepitaxial selective-area growth through insulator windows
US6495409B1 (en) MOS transistor having aluminum nitride gate structure and method of manufacturing same
Brunco et al. Germanium: The past and possibly a future material for microelectronics
US4489480A (en) Method of manufacturing field effect transistors of GaAs by ion implantation
US4693758A (en) Method of making devices in silicon, on insulator regrown by laser beam
US4799088A (en) High electron mobility single heterojunction semiconductor devices and methods for production thereof
KR900001233B1 (ko) 고캐리어 농도를 갖는 화합물 반도체층 및 그의 제조방법
EP0249371A2 (en) Semiconductor device including two compound semiconductors, and method of manufacturing such a device
US5903037A (en) GaAs-based MOSFET, and method of making same
Rao et al. Two‐step rapid thermal annealing of Si‐implanted InP: Fe
US6271069B1 (en) Method of making an article comprising an oxide layer on a GaAs-based semiconductor body
US3941624A (en) Sn-Doped group III(a)-v(a) Ga-containing layers grown by molecular beam epitaxy
JPH04233219A (ja) 半導体デバイスからなる製品の製造方法
EP0987746B1 (en) Method of making an integrated circuit comprising an oxide layer on a GaAs-based semiconductor substrate
Zeindl et al. Modulation-doped superlattices with delat layers in silicon
US5183779A (en) Method for doping GaAs with high vapor pressure elements
Thompson et al. Controlled p‐and n‐type doping of homo‐and heteroepitaxially grown InSb

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19860222

PA0201 Request for examination
PG1501 Laying open of application
G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

Comment text: Decision on Publication of Application

Patent event code: PG16051S01I

Patent event date: 19900202

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19900601

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 19900821

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 19900821

End annual number: 3

Start annual number: 1

PR1001 Payment of annual fee

Payment date: 19930303

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 19940305

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 19950302

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 19960229

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 19970226

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 19980224

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 19990220

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20000222

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20010228

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20020227

Start annual number: 13

End annual number: 13

PR1001 Payment of annual fee

Payment date: 20030224

Start annual number: 14

End annual number: 14

PR1001 Payment of annual fee

Payment date: 20040219

Start annual number: 15

End annual number: 15

FPAY Annual fee payment

Payment date: 20050225

Year of fee payment: 16

PR1001 Payment of annual fee

Payment date: 20050225

Start annual number: 16

End annual number: 16

EXPY Expiration of term
PC1801 Expiration of term