JPS61204372A - 電子線による異種原子の固体内注入を利用した材料の非晶質化方法 - Google Patents
電子線による異種原子の固体内注入を利用した材料の非晶質化方法Info
- Publication number
- JPS61204372A JPS61204372A JP60043992A JP4399285A JPS61204372A JP S61204372 A JPS61204372 A JP S61204372A JP 60043992 A JP60043992 A JP 60043992A JP 4399285 A JP4399285 A JP 4399285A JP S61204372 A JPS61204372 A JP S61204372A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous
- electron beam
- thin film
- crystal
- atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 46
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims description 23
- 239000007787 solid Substances 0.000 title claims description 3
- 238000002513 implantation Methods 0.000 title 1
- 239000013078 crystal Substances 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 13
- 230000001678 irradiating effect Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 22
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000010791 quenching Methods 0.000 description 5
- 230000000171 quenching effect Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000002178 crystalline material Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000005465 channeling Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000008204 material by function Substances 0.000 description 2
- 238000007734 materials engineering Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241000277331 Salmonidae Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000013080 microcrystalline material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C12/00—Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
- C23C12/02—Diffusion in one step
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/60—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using solids, e.g. powders, pastes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60043992A JPS61204372A (ja) | 1985-03-06 | 1985-03-06 | 電子線による異種原子の固体内注入を利用した材料の非晶質化方法 |
| US06/776,519 US4668527A (en) | 1985-03-06 | 1985-09-16 | Method for amorphizing a material by means of injection of exotic atoms into a solid with electron beams |
| EP85306678A EP0193674B1 (de) | 1985-03-06 | 1985-09-19 | Verfahren zum Überführen eines Feststoffes in den amorphen Zustand durch Einbringen eines exotischen Atoms mittels Elektronenstrahlen |
| DE8585306678T DE3576538D1 (de) | 1985-03-06 | 1985-09-19 | Verfahren zum ueberfuehren eines feststoffes in den amorphen zustand durch einbringen eines exotischen atoms mittels elektronenstrahlen. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60043992A JPS61204372A (ja) | 1985-03-06 | 1985-03-06 | 電子線による異種原子の固体内注入を利用した材料の非晶質化方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61204372A true JPS61204372A (ja) | 1986-09-10 |
| JPH0116308B2 JPH0116308B2 (de) | 1989-03-23 |
Family
ID=12679212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60043992A Granted JPS61204372A (ja) | 1985-03-06 | 1985-03-06 | 電子線による異種原子の固体内注入を利用した材料の非晶質化方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4668527A (de) |
| EP (1) | EP0193674B1 (de) |
| JP (1) | JPS61204372A (de) |
| DE (1) | DE3576538D1 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113718200A (zh) * | 2021-08-25 | 2021-11-30 | 西安交通大学 | 一种基于高温离子辐照制备梯度结构非晶薄膜的方法 |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0674501B2 (ja) * | 1985-02-27 | 1994-09-21 | 大阪大学長 | 電子線による異種原子の固体内注入方法 |
| DE271426T1 (de) * | 1986-11-07 | 1989-01-05 | United Technologies Corp., Hartford, Conn. | Verfahren zur herstellung eines multimetallischen gegenstandes. |
| DE271425T1 (de) * | 1986-11-07 | 1988-12-15 | United Technologies Corp., Hartford, Conn. | Multimetallisch hergestellter gegenstand. |
| CA2166450C (en) * | 1995-01-20 | 2008-03-25 | Ronald Salovey | Chemically crosslinked ultrahigh molecular weight polyethylene for artificial human joints |
| US6149389A (en) * | 1996-03-13 | 2000-11-21 | Forschungszentrum Karlsruhe Gmbh | Protective coating for turbine blades |
| DE19609690C2 (de) * | 1996-03-13 | 2000-12-28 | Karlsruhe Forschzent | Turbinenschaufel |
| US6228900B1 (en) | 1996-07-09 | 2001-05-08 | The Orthopaedic Hospital And University Of Southern California | Crosslinking of polyethylene for low wear using radiation and thermal treatments |
| JP2000514481A (ja) * | 1996-07-09 | 2000-10-31 | ザ オーソピーディック ホスピタル | 放射線及び熱処理を用いた低摩耗ポリエチレンの架橋 |
| US6017975A (en) | 1996-10-02 | 2000-01-25 | Saum; Kenneth Ashley | Process for medical implant of cross-linked ultrahigh molecular weight polyethylene having improved balance of wear properties and oxidation resistance |
| AU4986497A (en) | 1996-10-15 | 1998-05-11 | Orthopaedic Hospital, The | Wear resistant surface-gradient cross-linked polyethylene |
| DE19740696A1 (de) * | 1997-09-16 | 1999-03-18 | Bayerische Motoren Werke Ag | Verfahren zur Herstellung und Bearbeitung metallischer Schichten |
| US6692679B1 (en) | 1998-06-10 | 2004-02-17 | Depuy Orthopaedics, Inc. | Cross-linked molded plastic bearings |
| US6245276B1 (en) | 1999-06-08 | 2001-06-12 | Depuy Orthopaedics, Inc. | Method for molding a cross-linked preform |
| US6627141B2 (en) | 1999-06-08 | 2003-09-30 | Depuy Orthopaedics, Inc. | Method for molding a cross-linked preform |
| US6818172B2 (en) | 2000-09-29 | 2004-11-16 | Depuy Products, Inc. | Oriented, cross-linked UHMWPE molding for orthopaedic applications |
| US7819925B2 (en) * | 2002-01-28 | 2010-10-26 | Depuy Products, Inc. | Composite prosthetic bearing having a crosslinked articulating surface and method for making the same |
| US7186364B2 (en) | 2002-01-28 | 2007-03-06 | Depuy Products, Inc. | Composite prosthetic bearing constructed of polyethylene and an ethylene-acrylate copolymer and method for making the same |
| US20040002770A1 (en) * | 2002-06-28 | 2004-01-01 | King Richard S. | Polymer-bioceramic composite for orthopaedic applications and method of manufacture thereof |
| US7938861B2 (en) * | 2003-04-15 | 2011-05-10 | Depuy Products, Inc. | Implantable orthopaedic device and method for making the same |
| US20040262809A1 (en) * | 2003-06-30 | 2004-12-30 | Smith Todd S. | Crosslinked polymeric composite for orthopaedic implants |
| US7384430B2 (en) * | 2004-06-30 | 2008-06-10 | Depuy Products, Inc. | Low crystalline polymeric material for orthopaedic implants and an associated method |
| US7879275B2 (en) * | 2004-12-30 | 2011-02-01 | Depuy Products, Inc. | Orthopaedic bearing and method for making the same |
| US7883653B2 (en) | 2004-12-30 | 2011-02-08 | Depuy Products, Inc. | Method of making an implantable orthopaedic bearing |
| US7896921B2 (en) * | 2004-12-30 | 2011-03-01 | Depuy Products, Inc. | Orthopaedic bearing and method for making the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5693870A (en) * | 1979-12-13 | 1981-07-29 | Atomic Energy Authority Uk | Titanium and improvement of titanium alloy |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2911533A (en) * | 1957-12-24 | 1959-11-03 | Arthur C Damask | Electron irradiation of solids |
| DE1614854A1 (de) * | 1966-12-30 | 1970-12-23 | Texas Instruments Inc | Verfahren zur Erzeugung von UEbergaengen in Halbleitern |
| US3718502A (en) * | 1969-10-15 | 1973-02-27 | J Gibbons | Enhancement of diffusion of atoms into a heated substrate by bombardment |
| CA1095387A (en) * | 1976-02-17 | 1981-02-10 | Conrad M. Banas | Skin melting |
| FR2475068B1 (fr) * | 1980-02-01 | 1986-05-16 | Commissariat Energie Atomique | Procede de dopage de semi-conducteurs |
| GB2073254B (en) * | 1980-04-09 | 1984-05-23 | Atomic Energy Authority Uk | Ion implanting metal coated ferrous surfaces |
| US4359486A (en) * | 1980-08-28 | 1982-11-16 | Siemens Aktiengesellschaft | Method of producing alloyed metal contact layers on crystal-orientated semiconductor surfaces by energy pulse irradiation |
| GB2125442B (en) * | 1982-05-24 | 1986-02-19 | Atomic Energy Authority Uk | A procedure for the hardening of materials |
| DE3224810A1 (de) * | 1982-07-02 | 1984-01-05 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur erzeugung harter, verschleissfester randschichten auf einem metallischen werkstoff |
| JPH0674501B2 (ja) * | 1985-02-27 | 1994-09-21 | 大阪大学長 | 電子線による異種原子の固体内注入方法 |
| EP1811073A2 (de) * | 2006-01-18 | 2007-07-25 | BERNINA International AG | Nähmaschine und Verfahren zum Erfassen von Bewegungen bei Nähmaschinen |
-
1985
- 1985-03-06 JP JP60043992A patent/JPS61204372A/ja active Granted
- 1985-09-16 US US06/776,519 patent/US4668527A/en not_active Expired - Lifetime
- 1985-09-19 EP EP85306678A patent/EP0193674B1/de not_active Expired - Lifetime
- 1985-09-19 DE DE8585306678T patent/DE3576538D1/de not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5693870A (en) * | 1979-12-13 | 1981-07-29 | Atomic Energy Authority Uk | Titanium and improvement of titanium alloy |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113718200A (zh) * | 2021-08-25 | 2021-11-30 | 西安交通大学 | 一种基于高温离子辐照制备梯度结构非晶薄膜的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0193674A1 (de) | 1986-09-10 |
| JPH0116308B2 (de) | 1989-03-23 |
| EP0193674B1 (de) | 1990-03-14 |
| DE3576538D1 (de) | 1990-04-19 |
| US4668527A (en) | 1987-05-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |