JPS61201696A - 化合物半導体単結晶の製造方法 - Google Patents

化合物半導体単結晶の製造方法

Info

Publication number
JPS61201696A
JPS61201696A JP60037548A JP3754885A JPS61201696A JP S61201696 A JPS61201696 A JP S61201696A JP 60037548 A JP60037548 A JP 60037548A JP 3754885 A JP3754885 A JP 3754885A JP S61201696 A JPS61201696 A JP S61201696A
Authority
JP
Japan
Prior art keywords
single crystal
gas
crystal
compound semiconductor
boron concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60037548A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0329036B2 (enExample
Inventor
Hiroo Miyairi
宮入　広雄
Haruo Emori
江森　春夫
Tsuguo Fukuda
承生 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60037548A priority Critical patent/JPS61201696A/ja
Publication of JPS61201696A publication Critical patent/JPS61201696A/ja
Publication of JPH0329036B2 publication Critical patent/JPH0329036B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP60037548A 1985-02-28 1985-02-28 化合物半導体単結晶の製造方法 Granted JPS61201696A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60037548A JPS61201696A (ja) 1985-02-28 1985-02-28 化合物半導体単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60037548A JPS61201696A (ja) 1985-02-28 1985-02-28 化合物半導体単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS61201696A true JPS61201696A (ja) 1986-09-06
JPH0329036B2 JPH0329036B2 (enExample) 1991-04-22

Family

ID=12500574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60037548A Granted JPS61201696A (ja) 1985-02-28 1985-02-28 化合物半導体単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS61201696A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103995A (ja) * 1987-10-15 1989-04-21 Mitsubishi Monsanto Chem Co 高比抵抗３−５族化合物単結晶

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61197499A (ja) * 1985-02-27 1986-09-01 Mitsubishi Monsanto Chem Co 無機化合物単結晶の成長方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61197499A (ja) * 1985-02-27 1986-09-01 Mitsubishi Monsanto Chem Co 無機化合物単結晶の成長方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103995A (ja) * 1987-10-15 1989-04-21 Mitsubishi Monsanto Chem Co 高比抵抗３−５族化合物単結晶

Also Published As

Publication number Publication date
JPH0329036B2 (enExample) 1991-04-22

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