JPS61201696A - 化合物半導体単結晶の製造方法 - Google Patents
化合物半導体単結晶の製造方法Info
- Publication number
- JPS61201696A JPS61201696A JP3754885A JP3754885A JPS61201696A JP S61201696 A JPS61201696 A JP S61201696A JP 3754885 A JP3754885 A JP 3754885A JP 3754885 A JP3754885 A JP 3754885A JP S61201696 A JPS61201696 A JP S61201696A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- gas
- crystal
- compound semiconductor
- boron concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 87
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 150000001875 compounds Chemical class 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910052796 boron Inorganic materials 0.000 claims abstract description 41
- 239000007789 gas Substances 0.000 claims abstract description 41
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000000565 sealant Substances 0.000 claims abstract description 10
- 239000011261 inert gas Substances 0.000 claims abstract description 9
- 238000002156 mixing Methods 0.000 claims abstract description 9
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 37
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 abstract description 11
- 230000007547 defect Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 4
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 7
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 229910052743 krypton Inorganic materials 0.000 description 6
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000370 acceptor Substances 0.000 description 4
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000004854 X-ray topography Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241001123946 Gaga Species 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3754885A JPS61201696A (ja) | 1985-02-28 | 1985-02-28 | 化合物半導体単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3754885A JPS61201696A (ja) | 1985-02-28 | 1985-02-28 | 化合物半導体単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61201696A true JPS61201696A (ja) | 1986-09-06 |
| JPH0329036B2 JPH0329036B2 (enrdf_load_stackoverflow) | 1991-04-22 |
Family
ID=12500574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3754885A Granted JPS61201696A (ja) | 1985-02-28 | 1985-02-28 | 化合物半導体単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61201696A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01103995A (ja) * | 1987-10-15 | 1989-04-21 | Mitsubishi Monsanto Chem Co | 高比抵抗３−５族化合物単結晶 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61197499A (ja) * | 1985-02-27 | 1986-09-01 | Mitsubishi Monsanto Chem Co | 無機化合物単結晶の成長方法 |
-
1985
- 1985-02-28 JP JP3754885A patent/JPS61201696A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61197499A (ja) * | 1985-02-27 | 1986-09-01 | Mitsubishi Monsanto Chem Co | 無機化合物単結晶の成長方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01103995A (ja) * | 1987-10-15 | 1989-04-21 | Mitsubishi Monsanto Chem Co | 高比抵抗３−５族化合物単結晶 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0329036B2 (enrdf_load_stackoverflow) | 1991-04-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |