JPS6120133B2 - - Google Patents

Info

Publication number
JPS6120133B2
JPS6120133B2 JP52100457A JP10045777A JPS6120133B2 JP S6120133 B2 JPS6120133 B2 JP S6120133B2 JP 52100457 A JP52100457 A JP 52100457A JP 10045777 A JP10045777 A JP 10045777A JP S6120133 B2 JPS6120133 B2 JP S6120133B2
Authority
JP
Japan
Prior art keywords
diffusion
phosphorus
film
forming
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52100457A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5434767A (en
Inventor
Akira Muramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10045777A priority Critical patent/JPS5434767A/ja
Publication of JPS5434767A publication Critical patent/JPS5434767A/ja
Publication of JPS6120133B2 publication Critical patent/JPS6120133B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP10045777A 1977-08-24 1977-08-24 Formation method of n-type layer Granted JPS5434767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10045777A JPS5434767A (en) 1977-08-24 1977-08-24 Formation method of n-type layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10045777A JPS5434767A (en) 1977-08-24 1977-08-24 Formation method of n-type layer

Publications (2)

Publication Number Publication Date
JPS5434767A JPS5434767A (en) 1979-03-14
JPS6120133B2 true JPS6120133B2 (enExample) 1986-05-21

Family

ID=14274435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10045777A Granted JPS5434767A (en) 1977-08-24 1977-08-24 Formation method of n-type layer

Country Status (1)

Country Link
JP (1) JPS5434767A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62153833U (enExample) * 1986-03-24 1987-09-30

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162467A (en) * 1981-03-31 1982-10-06 Toshiba Corp Manufacture of semiconductor device
NL8600022A (nl) * 1986-01-08 1987-08-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een doteringselement vanuit zijn oxide in een halfgeleiderlichaam wordt gediffundeerd.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62153833U (enExample) * 1986-03-24 1987-09-30

Also Published As

Publication number Publication date
JPS5434767A (en) 1979-03-14

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