JPS6118856B2 - - Google Patents

Info

Publication number
JPS6118856B2
JPS6118856B2 JP53152766A JP15276678A JPS6118856B2 JP S6118856 B2 JPS6118856 B2 JP S6118856B2 JP 53152766 A JP53152766 A JP 53152766A JP 15276678 A JP15276678 A JP 15276678A JP S6118856 B2 JPS6118856 B2 JP S6118856B2
Authority
JP
Japan
Prior art keywords
region
boron
arsenic
diffusion
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53152766A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54104771A (en
Inventor
Imesu Magudo Inguritsudo
Boogu Arumin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS54104771A publication Critical patent/JPS54104771A/ja
Publication of JPS6118856B2 publication Critical patent/JPS6118856B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/061—Gettering-armorphous layers

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP15276678A 1978-01-27 1978-12-12 Method of fabricating impurity area superimposed with boron and doped boron Granted JPS54104771A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/872,982 US4149915A (en) 1978-01-27 1978-01-27 Process for producing defect-free semiconductor devices having overlapping high conductivity impurity regions

Publications (2)

Publication Number Publication Date
JPS54104771A JPS54104771A (en) 1979-08-17
JPS6118856B2 true JPS6118856B2 (enExample) 1986-05-14

Family

ID=25360742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15276678A Granted JPS54104771A (en) 1978-01-27 1978-12-12 Method of fabricating impurity area superimposed with boron and doped boron

Country Status (4)

Country Link
US (1) US4149915A (enExample)
EP (1) EP0003330B1 (enExample)
JP (1) JPS54104771A (enExample)
DE (1) DE2963044D1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2838928A1 (de) * 1978-09-07 1980-03-20 Ibm Deutschland Verfahren zum dotieren von siliciumkoerpern mit bor
IT1166587B (it) * 1979-01-22 1987-05-05 Ates Componenti Elettron Processo per la fabbricazione di transistori mos complementari ad alta integrazione per tensioni elevate
US4261763A (en) * 1979-10-01 1981-04-14 Burroughs Corporation Fabrication of integrated circuits employing only ion implantation for all dopant layers
DE2951292A1 (de) * 1979-12-20 1981-07-02 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum dotieren von siliciumkoerpern durch eindiffundieren von bor
US4381956A (en) * 1981-04-06 1983-05-03 Motorola, Inc. Self-aligned buried channel fabrication process
US4602965A (en) * 1984-03-13 1986-07-29 Communications Satellite Corporation Method of making FETs in GaAs by dual species implantation of silicon and boron
US4717687A (en) * 1986-06-26 1988-01-05 Motorola Inc. Method for providing buried layer delineation
KR0171000B1 (ko) * 1995-12-15 1999-02-01 양승택 자동 정의된 베이스 전극을 갖는 바이폴라 트랜지스터 구조 및 그 제조방법
DE19840866B4 (de) * 1998-08-31 2005-02-03 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Verfahren zur Dotierung der externen Basisanschlußgebiete von Si-basierten Einfach-Polysilizium-npn-Bipolartransistoren

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3491325A (en) * 1967-02-15 1970-01-20 Ibm Temperature compensation for semiconductor devices
US3542609A (en) * 1967-11-22 1970-11-24 Itt Double depositions of bbr3 in silicon
US3879230A (en) * 1970-02-07 1975-04-22 Tokyo Shibaura Electric Co Semiconductor device diffusion source containing as impurities AS and P or B
US3834953A (en) * 1970-02-07 1974-09-10 Tokyo Shibaura Electric Co Semiconductor devices containing as impurities as and p or b and the method of manufacturing the same
US3713908A (en) * 1970-05-15 1973-01-30 Ibm Method of fabricating lateral transistors and complementary transistors
US3770521A (en) * 1971-04-14 1973-11-06 Ibm Method for diffusing b or p into s: substrates
US4049478A (en) * 1971-05-12 1977-09-20 Ibm Corporation Utilization of an arsenic diffused emitter in the fabrication of a high performance semiconductor device
US3928091A (en) * 1971-09-27 1975-12-23 Hitachi Ltd Method for manufacturing a semiconductor device utilizing selective oxidation
US3798084A (en) * 1972-08-11 1974-03-19 Ibm Simultaneous diffusion processing
US3966514A (en) * 1975-06-30 1976-06-29 Ibm Corporation Method for forming dielectric isolation combining dielectric deposition and thermal oxidation

Also Published As

Publication number Publication date
DE2963044D1 (en) 1982-07-29
EP0003330B1 (de) 1982-06-09
EP0003330A1 (de) 1979-08-08
US4149915A (en) 1979-04-17
JPS54104771A (en) 1979-08-17

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